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<p>Strain-sensitive LaCoO<sub>3</sub> was epitaxially employed as the ferromagnetic layer, while SrFeO<sub>2.5</sub> was used as the antiferromagnetic layer to fabricate SrFeO<sub>2.5</sub>/LaCoO<sub>3</sub> bilayers. When the LaCoO<sub>3</sub> layer is relatively thin, the bilayers exhibit an exchange spring behavior akin to soft/hard magnetic coupling. However, when the LaCoO<sub>3</sub> layer transitions from being thin to thick, the bilayers transform into a single ferromagnetic-phase magnetization reversal mode. Meanwhile, all the bilayers are accompanied by an obvious exchange bias effect. Extensive experimental results indicate that the changes in the magnetization reversal process and the appearance of exchange bias effect are closely associated with the pinning effect caused by magnetic coupling interaction at the ferromagnetic/antiferromagnetic interface, rather than the soft/hard magnetic phases generated by the LCO layer induced by the substrate.</p>

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Coexistence of Exchange Spring and Exchange Bias Effect in SrFeO2.5/LaCoO3 Heterostructures

  • 期刊论文

  • 发表日期：

    2026年7月9日

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  • Jun Zhang,
  • Ye Zhao,
  • Yufan Shen,
  • Jianchun Ma

摘要

Strain-sensitive LaCoO3 was epitaxially employed as the ferromagnetic layer, while SrFeO2.5 was used as the antiferromagnetic layer to fabricate SrFeO2.5/LaCoO3 bilayers. When the LaCoO3 layer is relatively thin, the bilayers exhibit an exchange spring behavior akin to soft/hard magnetic coupling. However, when the LaCoO3 layer transitions from being thin to thick, the bilayers transform into a single ferromagnetic-phase magnetization reversal mode. Meanwhile, all the bilayers are accompanied by an obvious exchange bias effect. Extensive experimental results indicate that the changes in the magnetization reversal process and the appearance of exchange bias effect are closely associated with the pinning effect caused by magnetic coupling interaction at the ferromagnetic/antiferromagnetic interface, rather than the soft/hard magnetic phases generated by the LCO layer induced by the substrate.