<p>In this work, AgNbO<sub>3</sub> was successfully synthesized via a solid-state route and sintered at 900&#xa0;°C. X-ray diffraction confirmed the formation of a single-phase perovskite with Pmc2<sub>1</sub> space group symmetry. Optical studies using the Kubelka-Munk function revealed a direct bandgap of 2.65&#xa0;eV, while dielectric measurements revealed a characteristic phase transition near 343&#xa0;K, consistent with the ferroelectric nature of AgNbO<sub>3</sub> reported in previous studies. Electrical transport and conduction mechanisms were investigated through complex impedance spectroscopy over 0.1-1&#xa0;MHz and 303–393&#xa0;K. The impedance spectra exhibited single semicircular arcs, effectively modeled with an R//C//CPE equivalent circuit, highlighting the dominant role of highly resistive grain boundaries. AC conductivity followed Jonscher’s universal power law, with the frequency exponent indicating a Correlated Barrier Hopping (CBH) mechanism. Notably, the conduction mechanism transitions from single-polaron hopping below 343&#xa0;K to double-polaron hopping above this temperature, with activation energies of 0.082 ± 0.006&#xa0;eV and 0.14 ± 0.03&#xa0;eV, respectively. These findings demonstrate that AgNbO<sub>3</sub> exhibits a synergistic combination of ferroelectricity, semiconducting behavior, and thermally activated conduction mechanisms, highlighting its potential for prospective next-generation optoelectronic, dielectric, and energy-storage applications.</p>

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Structural, optical, dielectric, and electrothermal properties of ferroelectric AgNbO3 perovskite for optoelectronic applications

  • Noweir Ahmad Alghamdi

摘要

In this work, AgNbO3 was successfully synthesized via a solid-state route and sintered at 900 °C. X-ray diffraction confirmed the formation of a single-phase perovskite with Pmc21 space group symmetry. Optical studies using the Kubelka-Munk function revealed a direct bandgap of 2.65 eV, while dielectric measurements revealed a characteristic phase transition near 343 K, consistent with the ferroelectric nature of AgNbO3 reported in previous studies. Electrical transport and conduction mechanisms were investigated through complex impedance spectroscopy over 0.1-1 MHz and 303–393 K. The impedance spectra exhibited single semicircular arcs, effectively modeled with an R//C//CPE equivalent circuit, highlighting the dominant role of highly resistive grain boundaries. AC conductivity followed Jonscher’s universal power law, with the frequency exponent indicating a Correlated Barrier Hopping (CBH) mechanism. Notably, the conduction mechanism transitions from single-polaron hopping below 343 K to double-polaron hopping above this temperature, with activation energies of 0.082 ± 0.006 eV and 0.14 ± 0.03 eV, respectively. These findings demonstrate that AgNbO3 exhibits a synergistic combination of ferroelectricity, semiconducting behavior, and thermally activated conduction mechanisms, highlighting its potential for prospective next-generation optoelectronic, dielectric, and energy-storage applications.