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<p>Methane (CH<sub>4</sub>) is a highly flammable and environmentally significant gas, and its reliable detection at low operating temperatures is essential for industrial safety and environmental monitoring. Present work In<sub>2</sub>O<sub>3</sub>-doped WO<sub>3</sub> thick film gas sensors were successfully developed and systematically investigated for methane sensing applications. Thick films with varying In<sub>2</sub>O<sub>3</sub> concentrations (1–9%) were fabricated using a screen-printing technique. The morphological, structural, compositional, optical, and surface characteristics of the prepared samples were examined using XRD, FT-IR, Raman, FE-SEM with EDAX, UV–Vis spectroscopy, and BET surface area analysis. UV–Vis results revealed band gap modulation due to In<sub>2</sub>O<sub>3</sub> incorporation, indicating enhanced electronic interaction between In<sub>2</sub>O<sub>3</sub> and WO<sub>3</sub>. BET analysis confirmed a significant enhance in surface area (16.44%) and pore volume for the doped samples, particularly for 7 wt% In<sub>2</sub>O<sub>3</sub>–WO<sub>3</sub>, indicating the formation of a mesoporous structure. Gas sensing measurements demonstrated that In<sub>2</sub>O<sub>3</sub>–WO<sub>3</sub> doping markedly improves CH<sub>4</sub> sensing performance. The 7 wt% In<sub>2</sub>O<sub>3</sub>–WO<sub>3</sub> sensor exhibited the highest response (90.02% at 300 ppm), excellent selectivity toward methane over interfering gases, fast recovery–response behavior, and good stability at a low operating temperature of 120&#xa0;°C. The enhanced performance is attributed to increased oxygen vacancies, improved surface reactivity, and n–n heterojunction formation. These results suggest that In<sub>2</sub>O<sub>3</sub>-doped WO<sub>3</sub> thick films are promising candidates for efficient low-temperature methane sensing.</p>

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Development of In2O3-doped WO3 thick film sensors for CH4 monitoring applications

  • 期刊论文

  • 发表日期：

    2026年5月9日

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  • H. K. Suryawanshi,
  • S. M. Yenorkar,
  • K. N. Warale,
  • V. A. Mane

摘要

Methane (CH4) is a highly flammable and environmentally significant gas, and its reliable detection at low operating temperatures is essential for industrial safety and environmental monitoring. Present work In2O3-doped WO3 thick film gas sensors were successfully developed and systematically investigated for methane sensing applications. Thick films with varying In2O3 concentrations (1–9%) were fabricated using a screen-printing technique. The morphological, structural, compositional, optical, and surface characteristics of the prepared samples were examined using XRD, FT-IR, Raman, FE-SEM with EDAX, UV–Vis spectroscopy, and BET surface area analysis. UV–Vis results revealed band gap modulation due to In2O3 incorporation, indicating enhanced electronic interaction between In2O3 and WO3. BET analysis confirmed a significant enhance in surface area (16.44%) and pore volume for the doped samples, particularly for 7 wt% In2O3–WO3, indicating the formation of a mesoporous structure. Gas sensing measurements demonstrated that In2O3–WO3 doping markedly improves CH4 sensing performance. The 7 wt% In2O3–WO3 sensor exhibited the highest response (90.02% at 300 ppm), excellent selectivity toward methane over interfering gases, fast recovery–response behavior, and good stability at a low operating temperature of 120 °C. The enhanced performance is attributed to increased oxygen vacancies, improved surface reactivity, and n–n heterojunction formation. These results suggest that In2O3-doped WO3 thick films are promising candidates for efficient low-temperature methane sensing.