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<p>Zn-doped CuO nanostructures present a promising pathway for advanced optoelectronic technology through defect-controlled design. This study demonstrates the effective modulation of crystallography, morphology, optical behavior, defect activation, and carrier dynamics in the Zn-doped CuO nanostructures. Zn incorporation induced lattice distortion, modification in crystallite size and particle size distribution. All samples introduce the 2 energy bandgaps: a stable lower bandgap around 2.05&#xa0;eV and the higher direct bandgap from 2.74&#xa0;eV to 3.16&#xa0;eV, depending on Zn content. Dual-excitation photoluminescence conducted at wavelengths of 325&#xa0;nm and 400&#xa0;nm elucidated the selective activation of both shallow and deep-level defects. Furthermore, increasing the concentration of Zn resulted in a notable enhancement of the carrier Lifetime, extending from 2.97&#xa0;ms to 3.05&#xa0;ms. This observation features the role of several defects. The findings describe a structure–property–function relationship in Zn-doped CuO. A defect-controlled design establishes a strong framework that encourages the development of CuO-based semiconductors for eco-friendly applications in photocatalysis and optoelectronics.</p>

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Crystallographic modulation and dual excitation-dependent defect dynamics in isovalent Zn-Doped CuO

  • 期刊论文

  • 发表日期：

    2025年9月12日

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  • Suriyong Prachakiew,
  • Samor Boonphan,
  • Yanee Keereeta,
  • Chatdanai Boonruang,
  • Arrak Klinbumrung

摘要

Zn-doped CuO nanostructures present a promising pathway for advanced optoelectronic technology through defect-controlled design. This study demonstrates the effective modulation of crystallography, morphology, optical behavior, defect activation, and carrier dynamics in the Zn-doped CuO nanostructures. Zn incorporation induced lattice distortion, modification in crystallite size and particle size distribution. All samples introduce the 2 energy bandgaps: a stable lower bandgap around 2.05 eV and the higher direct bandgap from 2.74 eV to 3.16 eV, depending on Zn content. Dual-excitation photoluminescence conducted at wavelengths of 325 nm and 400 nm elucidated the selective activation of both shallow and deep-level defects. Furthermore, increasing the concentration of Zn resulted in a notable enhancement of the carrier Lifetime, extending from 2.97 ms to 3.05 ms. This observation features the role of several defects. The findings describe a structure–property–function relationship in Zn-doped CuO. A defect-controlled design establishes a strong framework that encourages the development of CuO-based semiconductors for eco-friendly applications in photocatalysis and optoelectronics.