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<p>Silver nanoparticles (AgNPs) were synthesized using pulsed laser ablation in liquid (PLAL) and integrated onto bulk gallium nitride (GaN) to enhance deep-ultraviolet (DUV) photodetector (PD) performance. Structural and optical characterizations confirmed the formation of crystalline AgNPs with an average size of 8&#xa0;nm. These nanoparticles exhibited a surface plasmon resonance (SPR) peak at 405&#xa0;nm, which red-shifted to 415&#xa0;nm upon deposition onto bulk GaN, a change attributed to nanoparticle-substrate coupling. Field-emission scanning electron microscopy and atomic force microscopy analyses revealed uniformly distributed AgNPs and increased surface roughness from 0.146&#xa0;nm to 39.5&#xa0;nm, thereby facilitating stronger light–matter interaction. The AgNPs/bulk GaN metal–semiconductor–metal (MSM) DUV PD exhibited a tenfold enhancement in photocurrent. At 6&#xa0;V bias under 280&#xa0;nm illumination, its responsivity increased from 81.9 to 829&#xa0;mA/W and its external quantum efficiency rose from 36.6% to 370%, significantly outperforming the bare bulk GaN device. These results confirm that plasmonic coupling between AgNPs and bulk GaN effectively amplifies photoresponse, establishing a promising strategy for high-performance DUV PDs.</p>

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Ten-Fold Enhancement of Bulk Gallium Nitride Deep Ultraviolet Photodetectors via Silver Nanoparticles

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月26日

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  • Momin S. M. Abutawahina,
  • S. S. Ng,
  • Naser M. Ahmed,
  • H. J. Quah

摘要

Silver nanoparticles (AgNPs) were synthesized using pulsed laser ablation in liquid (PLAL) and integrated onto bulk gallium nitride (GaN) to enhance deep-ultraviolet (DUV) photodetector (PD) performance. Structural and optical characterizations confirmed the formation of crystalline AgNPs with an average size of 8 nm. These nanoparticles exhibited a surface plasmon resonance (SPR) peak at 405 nm, which red-shifted to 415 nm upon deposition onto bulk GaN, a change attributed to nanoparticle-substrate coupling. Field-emission scanning electron microscopy and atomic force microscopy analyses revealed uniformly distributed AgNPs and increased surface roughness from 0.146 nm to 39.5 nm, thereby facilitating stronger light–matter interaction. The AgNPs/bulk GaN metal–semiconductor–metal (MSM) DUV PD exhibited a tenfold enhancement in photocurrent. At 6 V bias under 280 nm illumination, its responsivity increased from 81.9 to 829 mA/W and its external quantum efficiency rose from 36.6% to 370%, significantly outperforming the bare bulk GaN device. These results confirm that plasmonic coupling between AgNPs and bulk GaN effectively amplifies photoresponse, establishing a promising strategy for high-performance DUV PDs.