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<p>This study details the development and analysis of an n-In₂O₃/p-Si double heterojunction, created via chemical vapour deposition (CVD) on a p-type silicon substrate. Copper oxide nanoparticles (CuO NPs) were then deposited using drop-casting. X-ray diffraction (XRD) and scanning electron microscopy (SEM) examined the photodetectors’ structure, while electrical and optoelectronic properties were measured before and after CuO deposition. Two types of photodetectors were fabricated: one using In₂O₃ microwires on silicon films, and the other with a CuO/In₂O₃/Si composite structure. Current–voltage (I–V) measurements of the In₂O₃/Si structure showed rectifying behaviour; adding a CuO layer greatly improved electrical properties, resulting in a higher rectification factor and increased UV sensitivity for n-CuO/In₂O₃/p-Si photodiodes. This is attributed to the series double junction of In₂O₃/p-Si and n-CuO/In₂O₃. At a photoelectric power density of 7.88 mW/cm², the CuO/In₂O₃/Si photodetector achieved an IL/ID ratio of 3363.2 at a -3.5&#xa0;V bias, compared to 137 at a -0.5&#xa0;V bias for the In₂O₃/Si device. The results demonstrate high efficiency for the CuO/In₂O₃/Si structure in the visible range. Both types exhibited a strong UV response, with a sharp reduction in sensitivity at wavelengths near 350&#xa0;nm. The spectral response and quantum efficiency ranged from 0.082 to 0.27&#xa0;A/W and 29% to 94%, respectively, indicating strong potential for high-performance photodetection.</p>

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Photodetector Fabrication Based on Heterojunction of CuO/In2O3/Si Nanostructures

  • 期刊论文

  • 发表日期：

    2025年11月27日

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  • Abdulqader D. Faisal,
  • Ali A. Aljubouri,
  • Wafaa K. Khalef

摘要

This study details the development and analysis of an n-In₂O₃/p-Si double heterojunction, created via chemical vapour deposition (CVD) on a p-type silicon substrate. Copper oxide nanoparticles (CuO NPs) were then deposited using drop-casting. X-ray diffraction (XRD) and scanning electron microscopy (SEM) examined the photodetectors’ structure, while electrical and optoelectronic properties were measured before and after CuO deposition. Two types of photodetectors were fabricated: one using In₂O₃ microwires on silicon films, and the other with a CuO/In₂O₃/Si composite structure. Current–voltage (I–V) measurements of the In₂O₃/Si structure showed rectifying behaviour; adding a CuO layer greatly improved electrical properties, resulting in a higher rectification factor and increased UV sensitivity for n-CuO/In₂O₃/p-Si photodiodes. This is attributed to the series double junction of In₂O₃/p-Si and n-CuO/In₂O₃. At a photoelectric power density of 7.88 mW/cm², the CuO/In₂O₃/Si photodetector achieved an IL/ID ratio of 3363.2 at a -3.5 V bias, compared to 137 at a -0.5 V bias for the In₂O₃/Si device. The results demonstrate high efficiency for the CuO/In₂O₃/Si structure in the visible range. Both types exhibited a strong UV response, with a sharp reduction in sensitivity at wavelengths near 350 nm. The spectral response and quantum efficiency ranged from 0.082 to 0.27 A/W and 29% to 94%, respectively, indicating strong potential for high-performance photodetection.