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<p>This study presents an innovative planar structure exploiting the multi-parameter adjustable plasmonic induced transparency (PIT) effect, comprising a SiO₂ substrate, a MoS₂ strip, and a bulk Dirac semimetal (BDS) square ring. This configuration facilitates the emergence of pronounced PIT phenomena. Employing the Finite Difference Time Domain (FDTD) method, we conduct exhaustive numerical and theoretical analyses on the proposed PIT device, elucidating the underlying mechanisms governing the PIT effect. Our findings underscore that the transparent windows can be dynamically modulated by manipulating the Fermi level and carrier concentrations of both BDS and MoS₂, thereby offering efficient multi-parameter tuning capabilities. The PIT device is applied in refractive index (RI) sensing and slow light field applications, achieving a maximum RI sensitivity of approximately 6.24 THz/RIU and a maximum group delay of 0.69&#xa0;ps. These findings offer theoretical guidance for the dynamic integration of optoelectronic devices, such as slow light systems and sensors.</p>

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Plasmon-Induced Transparency Properties of MoS₂ and Bulk Dirac Semimetals and Their Applications in High-Sensitivity Refractive Index Sensing

  • 期刊论文

  • 发表日期：

    2025年6月25日

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  • Zhuang Li,
  • Fang Chen

摘要

This study presents an innovative planar structure exploiting the multi-parameter adjustable plasmonic induced transparency (PIT) effect, comprising a SiO₂ substrate, a MoS₂ strip, and a bulk Dirac semimetal (BDS) square ring. This configuration facilitates the emergence of pronounced PIT phenomena. Employing the Finite Difference Time Domain (FDTD) method, we conduct exhaustive numerical and theoretical analyses on the proposed PIT device, elucidating the underlying mechanisms governing the PIT effect. Our findings underscore that the transparent windows can be dynamically modulated by manipulating the Fermi level and carrier concentrations of both BDS and MoS₂, thereby offering efficient multi-parameter tuning capabilities. The PIT device is applied in refractive index (RI) sensing and slow light field applications, achieving a maximum RI sensitivity of approximately 6.24 THz/RIU and a maximum group delay of 0.69 ps. These findings offer theoretical guidance for the dynamic integration of optoelectronic devices, such as slow light systems and sensors.