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<p>Optical switches are vital for photonic integrated circuits (PICs), and their performance can be enhanced with plasmonic materials. This paper introduces a compact design leveraging plasmonics for a high on-off switching ratio. The design utilizes plasmonic material indium-tin-oxide (ITO) and graphene, achieving 52.17 dB/<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11468_2025_3120_Article_IEq1.gif" Format="GIF" Height="13" Rendition="HTML" Resolution="72" Type="Linedraw" Width="12" /> </InlineMediaObject> <EquationSource Format="TEX">\(\upmu \)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>m extinction ratio (ER) for a 500-nm long device, corresponding to the on-off switching ratio. The device also exhibits an energy consumption per bit (<i>E</i><sub>bit</sub>) of 0.492 fJ/bit and a modulation speed of 6.02 THz. Furthermore, the 2-<InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11468_2025_3120_Article_IEq1.gif" Format="GIF" Height="13" Rendition="HTML" Resolution="72" Type="Linedraw" Width="12" /> </InlineMediaObject> <EquationSource Format="TEX">\(\upmu \)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>m long device showed a modulation speed of 5.15 THz and an ER of 50.59 dB/<InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11468_2025_3120_Article_IEq1.gif" Format="GIF" Height="13" Rendition="HTML" Resolution="72" Type="Linedraw" Width="12" /> </InlineMediaObject> <EquationSource Format="TEX">\(\upmu \)</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">μ</mi> </math></EquationSource> </InlineEquation>m. These devices show great promise for application in next-generation PIC technologies.</p>

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Analysis of Dual Layer Plasmonic Switch Utilizing ITO and Graphene for Photonic Integrated Circuits

  • 期刊论文

  • 发表日期：

    2025年6月23日

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  • Himanshu R. Das,
  • Haraprasad Mondal,
  • Sagar Bhattarai,
  • Mohammad Soroosh,
  • Eshan Adibnia

摘要

Optical switches are vital for photonic integrated circuits (PICs), and their performance can be enhanced with plasmonic materials. This paper introduces a compact design leveraging plasmonics for a high on-off switching ratio. The design utilizes plasmonic material indium-tin-oxide (ITO) and graphene, achieving 52.17 dB/ \(\upmu \) μ m extinction ratio (ER) for a 500-nm long device, corresponding to the on-off switching ratio. The device also exhibits an energy consumption per bit (Ebit) of 0.492 fJ/bit and a modulation speed of 6.02 THz. Furthermore, the 2- \(\upmu \) μ m long device showed a modulation speed of 5.15 THz and an ER of 50.59 dB/ \(\upmu \) μ m. These devices show great promise for application in next-generation PIC technologies.