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<p>Currently, research on dynamic modulators primarily focuses on the coupling mechanism between metamaterials and bound states in the continuum (BIC), where the generation of quasi-BIC through structural symmetry breaking has become a crucial approach for achieving transmission/absorption modulation. However, existing quasi-BIC-based metasurface modulators generally suffer from limitations in modulation degrees of freedom and inadequate dynamic modulation capability. Particularly, the volatile nature of these devices leads to significant energy consumption during dynamic adjustment processes, severely affecting their energy efficiency and long-term stability. This paper proposes integrating resistive switching effects with the quasi-BIC mechanism by introducing resistive switching into the BIC metasurface system to design a non-volatile metasurface structure with symmetry-breaking characteristics. The structure employs square unit cells as fundamental components, each containing two semicircular silver disks embedded in resistive switching dielectric material at equal heights, with a SiO₂ substrate tightly adhered beneath both metallic disks and resistive switching medium. Numerical simulations reveal that structural symmetry breaking induces quasi-BIC resonance valleys, whose transmission minima exhibit correlation with conductive filament variations in the HfO₂ resistive switching layer. Leveraging the reversible conductivity characteristics of resistive switching materials (spanning five orders of magnitude), continuous modulation of resonance valley depth from 0.13 to 0.35 can be achieved through voltage control, achieving a modulation depth of 42%. This novel electro-optic coupling mechanism not only overcomes traditional dynamic modulators’ reliance on complex external field regulation but also provides new insights for developing highly integrated, low-power intelligent modulation devices.</p>

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Metasurface Modulator Based on Resistive Switching Effect and Bound States in the Continuum

  • 期刊论文

  • 发表日期：

    2025年6月17日

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  • Shanyong Luo,
  • Zhiliang Chen,
  • Mengmeng Xia,
  • Han Wang,
  • Zhongyang Li,
  • Pibin Bing,
  • Silei Wang,
  • Juan Xu,
  • Jianquan Yao

摘要

Currently, research on dynamic modulators primarily focuses on the coupling mechanism between metamaterials and bound states in the continuum (BIC), where the generation of quasi-BIC through structural symmetry breaking has become a crucial approach for achieving transmission/absorption modulation. However, existing quasi-BIC-based metasurface modulators generally suffer from limitations in modulation degrees of freedom and inadequate dynamic modulation capability. Particularly, the volatile nature of these devices leads to significant energy consumption during dynamic adjustment processes, severely affecting their energy efficiency and long-term stability. This paper proposes integrating resistive switching effects with the quasi-BIC mechanism by introducing resistive switching into the BIC metasurface system to design a non-volatile metasurface structure with symmetry-breaking characteristics. The structure employs square unit cells as fundamental components, each containing two semicircular silver disks embedded in resistive switching dielectric material at equal heights, with a SiO₂ substrate tightly adhered beneath both metallic disks and resistive switching medium. Numerical simulations reveal that structural symmetry breaking induces quasi-BIC resonance valleys, whose transmission minima exhibit correlation with conductive filament variations in the HfO₂ resistive switching layer. Leveraging the reversible conductivity characteristics of resistive switching materials (spanning five orders of magnitude), continuous modulation of resonance valley depth from 0.13 to 0.35 can be achieved through voltage control, achieving a modulation depth of 42%. This novel electro-optic coupling mechanism not only overcomes traditional dynamic modulators’ reliance on complex external field regulation but also provides new insights for developing highly integrated, low-power intelligent modulation devices.