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<p>Here, we design and investigate a Dirac semimetal-based cross-shaped annular multi-band terahertz absorber. The structure exhibits four TM-polarized absorption peaks at 6.42 THz (88.4%), 6.80 THz (98.1%), 7.64 THz (99.98%), and 8.15 THz (99.42%), alongside two TE-polarized peaks at 6.65 THz (99.98%) and 8.09 THz (98.94%). Coupled mode theory (CMT) accurately models the absorption spectra, while electromagnetic field analysis reveals that all six resonances stem from localized surface plasmon polaritons (LSPPs). Geometric tuning enables independent frequency adjustment of absorption bands. We systematically explore the impacts of incidence angle, chemical potential, polarization, scattering rate, and environmental refractive index on spectral response, achieving a peak sensitivity of 192.60&#xa0;GHz/RIU. The device’s dynamic tunability and high sensitivity position it as a versatile candidate for multi-band switching and sensing applications in terahertz regimes.&#xa0;</p>

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Theoretical Study of Dynamically Tunable Four-Band to Two-Band Terahertz Plasmonic Absorbers Based on Bulk Dirac Semimetal

  • 期刊论文

  • 发表日期：

    2025年5月29日

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  • Hao Fu,
  • Fang Chen

摘要

Here, we design and investigate a Dirac semimetal-based cross-shaped annular multi-band terahertz absorber. The structure exhibits four TM-polarized absorption peaks at 6.42 THz (88.4%), 6.80 THz (98.1%), 7.64 THz (99.98%), and 8.15 THz (99.42%), alongside two TE-polarized peaks at 6.65 THz (99.98%) and 8.09 THz (98.94%). Coupled mode theory (CMT) accurately models the absorption spectra, while electromagnetic field analysis reveals that all six resonances stem from localized surface plasmon polaritons (LSPPs). Geometric tuning enables independent frequency adjustment of absorption bands. We systematically explore the impacts of incidence angle, chemical potential, polarization, scattering rate, and environmental refractive index on spectral response, achieving a peak sensitivity of 192.60 GHz/RIU. The device’s dynamic tunability and high sensitivity position it as a versatile candidate for multi-band switching and sensing applications in terahertz regimes.