Enhanced Random Lasing from Perovskite Quantum Dot with PMMA and LSPR of Ag Nanoislands
摘要
CsPbX3 as a gain material with excellent photophysical properties has received extensive attention in recent years. However, the inherent instability of CsPbX3 quantum dots (QDs) and the defects of CsPbX3 film containing voids or pinholes seriously affect the amplified spontaneous emission (ASE) or lasing performance. Herein, a convenient method to improve the random laser performance of CsPbBr3 films using polymethyl methacrylate (PMMA) and Ag nanoislands is proposed. The low-threshold (~ 2.6 mJ/cm2) coherent random laser was obtained from CsPbBr3 film due to the surface passivation effect, the symmetrical waveguide (SWG) effect of PMMA, and the local surface plasmon effect induced by Ag nanoislands. The PMMA coating greatly improves the stability of the perovskite film in the atmosphere and radiation, and the CsPbBr3 film maintains 85% of its original emission intensity after being pumped by 9 × 104 times, which helps to solve the instability problem of the CsPbBr3 film random laser.