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<p>Ferroelectric diodes (FeDs) are regarded as a promising type of memory device for the post-Moore era due to their integration of non-volatile storage and rectification functionalities within a single device. This offers the potential for simplified structure, high-density integration, and in-memory computing. However, the critical challenge in realizing high-performance FeDs is to achieve a significant and stable on/off ratio, high rectification ratio, and robust device stability at elevated temperatures. Here, we demonstrate a metal-ferroelectric-metal (Ni-AlScN-TiN) FeDs utilizing aluminum scandium nitride (AlScN) that shows polarization-dependent hysteresis. The FeDs exhibit self-selective diode behavior with a rectification ratio exceeding 10<sup>4</sup> (at 11 V). The current-voltage (<i>I-V</i>) sweeps of the FeDs show an on/off ratio of greater than 4×10<sup>4</sup> for 8.8 V between low resistance states (LRS) and high resistance states (HRS). Furthermore, the devices demonstrate stable resistance states through 25 direct currents (DC) cycles and retain multi-level resistance states exceeding 1×10<sup>4</sup> s at room temperature (RT). Furthermore, the device retains clearly distinguishable switching states (on/off ratio &gt; 10<sup>4</sup>) at 180°C, with multi-level resistance states remaining stable for over 10<sup>3</sup> s at different temperatures. This work provides novel ideas and methodologies for multilevel storage in FeDs and significant potential for applications in extreme environments.</p>

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High-temperature stable AlScN-based ferroelectric diodes with large on/off and rectification ratios

  • 期刊论文

  • 发表日期：

    2026年5月25日

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  • Wenhao Shi,
  • Dongsheng Cui,
  • Jianxin Hua,
  • Xu Han,
  • Yiqun Liang,
  • Ruimei Yuan,
  • Xiangxiang Gao,
  • Haidong Yuan,
  • Jie Su,
  • Zhaogui Zeng,
  • Zhenhua Lin,
  • Ruidong Li,
  • Jincheng Zhang,
  • Yue Hao,
  • Jingjing Chang

摘要

Ferroelectric diodes (FeDs) are regarded as a promising type of memory device for the post-Moore era due to their integration of non-volatile storage and rectification functionalities within a single device. This offers the potential for simplified structure, high-density integration, and in-memory computing. However, the critical challenge in realizing high-performance FeDs is to achieve a significant and stable on/off ratio, high rectification ratio, and robust device stability at elevated temperatures. Here, we demonstrate a metal-ferroelectric-metal (Ni-AlScN-TiN) FeDs utilizing aluminum scandium nitride (AlScN) that shows polarization-dependent hysteresis. The FeDs exhibit self-selective diode behavior with a rectification ratio exceeding 104 (at 11 V). The current-voltage (I-V) sweeps of the FeDs show an on/off ratio of greater than 4×104 for 8.8 V between low resistance states (LRS) and high resistance states (HRS). Furthermore, the devices demonstrate stable resistance states through 25 direct currents (DC) cycles and retain multi-level resistance states exceeding 1×104 s at room temperature (RT). Furthermore, the device retains clearly distinguishable switching states (on/off ratio > 104) at 180°C, with multi-level resistance states remaining stable for over 103 s at different temperatures. This work provides novel ideas and methodologies for multilevel storage in FeDs and significant potential for applications in extreme environments.