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<p>4H silicon carbide (4H-SiC) has been widely used in high-power electronics. Bipolar degradation induced by the expansion of stacking faults is one of the most severe bottlenecks limiting the reliability of 4H-SiC based devices. In this work, we tailor the expansion and contraction kinetics of stacking faults by electron injection and contraction, respectively. We intentionally introduce stacking faults by introducing a high stress field caused by a comet defect. The comet defect is composed of 3C-SiC generated by the disturbed step-flow growth of a down fall defect. The lattice mismatch between 3C- and 4H-SiC gives rise to the formation of single-layer Shockley stacking faults (1SSFs). The expansion of 1SSFs upon minority-carrier injection is explained by electronic band structure and electron injection into the defect state of 1SSFs. In order to reduce or eliminate the bipolar degradation, we innovatively integrate a non-thermodynamic-equilibrium treatment using low-power UV irradiation with a thermodynamic-equilibrium thermal treatment to promote the contraction of 1SSFs by electron extraction. Our work comprehensively resolves the formation and evolution kinetics of 1SSFs, thereby providing a novel theoretical framework and practical process routine to manipulate the 1SSFs kinetics aiming to eliminate the bipolar degradation and improve the reliability of 4H-SiC devices.</p>

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Tailoring stacking-fault kinetics by electron injection and extraction in 4H-SiC

  • 期刊论文

  • 发表日期：

    2026年5月22日

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  • Jifa Liang,
  • Xiangxiang Zhao,
  • Haibing Zhang,
  • Xiaowei Zhang,
  • Lingbo Xu,
  • Can Cui,
  • Michael Dudley,
  • Xiaodong Pi,
  • Deren Yang,
  • Rong Wang

摘要

4H silicon carbide (4H-SiC) has been widely used in high-power electronics. Bipolar degradation induced by the expansion of stacking faults is one of the most severe bottlenecks limiting the reliability of 4H-SiC based devices. In this work, we tailor the expansion and contraction kinetics of stacking faults by electron injection and contraction, respectively. We intentionally introduce stacking faults by introducing a high stress field caused by a comet defect. The comet defect is composed of 3C-SiC generated by the disturbed step-flow growth of a down fall defect. The lattice mismatch between 3C- and 4H-SiC gives rise to the formation of single-layer Shockley stacking faults (1SSFs). The expansion of 1SSFs upon minority-carrier injection is explained by electronic band structure and electron injection into the defect state of 1SSFs. In order to reduce or eliminate the bipolar degradation, we innovatively integrate a non-thermodynamic-equilibrium treatment using low-power UV irradiation with a thermodynamic-equilibrium thermal treatment to promote the contraction of 1SSFs by electron extraction. Our work comprehensively resolves the formation and evolution kinetics of 1SSFs, thereby providing a novel theoretical framework and practical process routine to manipulate the 1SSFs kinetics aiming to eliminate the bipolar degradation and improve the reliability of 4H-SiC devices.