Unveiling in-plane and out-of-plane phonon anisotropy in NbIrTe4 through polarization-resolved Raman spectroscopy
摘要
NbIrTe4, a low-symmetry layered material, exhibits pronounced anisotropic electronic and vibrational properties, making it a compelling platform for anisotropic and topological applications. However, its Raman-active phonon modes remain partially undiscovered, due to selection rule limitations in conventional configurations. In this study, we employ angle-resolved polarization Raman spectroscopy to comprehensively probe both in-plane and out-of-plane phonon modes, enabling the full revelation of all Raman-active modes, including the out-of-plane B1 and B2 modes that we observe experimentally. By analyzing polarization-dependent spectra across multiple orientations, we uncover strong anisotropy in phonon behavior and extract Raman tensor components. These findings advance the fundamental understanding of direction-dependent vibrational dynamics in NbIrTe4 and offer a theoretical foundation for exploring orientation-tunable properties in low-symmetry 2D materials.