Scholarlink

<p>In this paper, we demonstrate the excellent performance of InAlN/GaN high electron mobility transistors (HEMTs) for high-voltage radio frequency (RF) application. By using a composite cap layer structure of GaN cap layer and polycrystalline (PC)-AlN cap layer, the gate leakage is effectively suppressed, resulting in a 0.5-µm InAlN/GaN HEMTs achieving a high current on/off ratio (ON/OFF) of 7 × 10<sup>7</sup> as well as a record breakdown voltage (BV) of 270 V. The device yields a high peak transconductance (<i>G</i><sub><i>m</i></sub>) of 350 mS/mm and a low sub-threshold swing (SS) of 80 mV/decade while virtually free of drain induced barrier lowering (DIBL) effect (about 2.5 mV/V). Besides, the InAlN/GaN HEMTs with composite cap layer structure exhibit a current gain cut-off frequency/ maximum oscillation frequency (<i>f</i><sub><i>T</i></sub>/<i>f</i><sub>max</sub>) of 22/64 GHz. To the best of our knowledge, the device has the highest figure-of-merit (FoM = <i>f</i><sub>max</sub> × BV × <i>L</i><sub><i>g</i></sub>) of 8.6 THz·V·µm compared to the InAlN/GaN HEMTs reported in the past. These results demonstrate that the design of the composite cap layer structure extends the RF InAlN/GaN HEMTs for high voltage applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap

  • 期刊论文

  • 发表日期：

    2026年1月14日

查看全文
  • Shiming Li,
  • Hao Lu,
  • Ling Yang,
  • Mei Wu,
  • Bin Hou,
  • Meng Zhang,
  • Xiaohua Ma,
  • Yue Hao

摘要

In this paper, we demonstrate the excellent performance of InAlN/GaN high electron mobility transistors (HEMTs) for high-voltage radio frequency (RF) application. By using a composite cap layer structure of GaN cap layer and polycrystalline (PC)-AlN cap layer, the gate leakage is effectively suppressed, resulting in a 0.5-µm InAlN/GaN HEMTs achieving a high current on/off ratio (ON/OFF) of 7 × 107 as well as a record breakdown voltage (BV) of 270 V. The device yields a high peak transconductance (Gm) of 350 mS/mm and a low sub-threshold swing (SS) of 80 mV/decade while virtually free of drain induced barrier lowering (DIBL) effect (about 2.5 mV/V). Besides, the InAlN/GaN HEMTs with composite cap layer structure exhibit a current gain cut-off frequency/ maximum oscillation frequency (fT/fmax) of 22/64 GHz. To the best of our knowledge, the device has the highest figure-of-merit (FoM = fmax × BV × Lg) of 8.6 THz·V·µm compared to the InAlN/GaN HEMTs reported in the past. These results demonstrate that the design of the composite cap layer structure extends the RF InAlN/GaN HEMTs for high voltage applications.