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<p>In this work, we present high-performance SiN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate for low-voltage application. Attributed to n<sup>+</sup>-InGaN regrown ohmic contacts, the devices show low on-resistance of 0.6 Ω·mm and knee voltage of 1.2 V. Low pressure chemical vapor deposition SiN was used as a passivation to withstand the high temperature when SiN gate dielectric was deposited by plasma enhanced atomic layer deposition. The devices with the source-drain spacing of 0.9 µm demonstrate low leakage current with the high on/off current ratio of 5 × 10<sup>7</sup>, breakdown voltage of 52 V, and low current collapse at 30 V drain quiescent condition of 3.5%. Due to the use of 7-nm thin-barrier AlGaN, the devices with a 250-nm gate length have gradely frequency characteristics with a peak transconductance of 597 mS/mm and a cut-off frequency/maximum oscillation frequency (<i>f</i><sub>T</sub>/<i>f</i><sub>max</sub>) of 43/120 GHz. S-band continuous wave large signal measurements yield a high PAE over 70% at low voltages of 6 and 9 V. The devices show a maximum output power of 1.73 W/mm and power gain of 19.1 dB at <i>V</i><sub>ds</sub> = 9 V. These excellent performances reveal the great potential of the SiN/AlGaN/GaN MIS-HEMTs in low-voltage RF applications.</p>

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High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts

  • 期刊论文

  • 发表日期：

    2025年9月10日

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  • Mengdi Li,
  • Jiejie Zhu,
  • Sheng Zhang,
  • Bowen Zhang,
  • Yuxi Zhou,
  • Dayan Yuan,
  • Lingjie Qin,
  • Mingchen Zhang,
  • Qingyuan Chang,
  • Chupeng Yi,
  • Ke Wei,
  • Xinyu Liu,
  • Xiaohua Ma,
  • Yue Hao

摘要

In this work, we present high-performance SiN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate for low-voltage application. Attributed to n+-InGaN regrown ohmic contacts, the devices show low on-resistance of 0.6 Ω·mm and knee voltage of 1.2 V. Low pressure chemical vapor deposition SiN was used as a passivation to withstand the high temperature when SiN gate dielectric was deposited by plasma enhanced atomic layer deposition. The devices with the source-drain spacing of 0.9 µm demonstrate low leakage current with the high on/off current ratio of 5 × 107, breakdown voltage of 52 V, and low current collapse at 30 V drain quiescent condition of 3.5%. Due to the use of 7-nm thin-barrier AlGaN, the devices with a 250-nm gate length have gradely frequency characteristics with a peak transconductance of 597 mS/mm and a cut-off frequency/maximum oscillation frequency (fT/fmax) of 43/120 GHz. S-band continuous wave large signal measurements yield a high PAE over 70% at low voltages of 6 and 9 V. The devices show a maximum output power of 1.73 W/mm and power gain of 19.1 dB at Vds = 9 V. These excellent performances reveal the great potential of the SiN/AlGaN/GaN MIS-HEMTs in low-voltage RF applications.