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<p>The ferroelectric field-effect transistor (FeFET) with an amorphous indium–gallium–zinc oxide (<i>α</i>-IGZO) channel and an atomic-layer-deposited 2 nm HfO<sub>2</sub> interfacial layer (IL) was designed and fabricated to optimize both memory window (MW) and reliability. Compared with the FeFET without IL, the FeFET with 2 nm HfO<sub>2</sub> IL achieved an enhanced MW of 1.1 V at a reliable operating voltage with ultrafast current-voltage operation and an approximately 1000 times improvement in endurance with an available MW of ∼0.85 V after exerting pulses over 10<sup>7</sup> cycles while maintaining retention of over 10 years. This work proposes an effective strategy to enhance MW and reliability for future nonvolatile memory applications.</p>

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Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer

  • 期刊论文

  • 发表日期：

    2025年5月15日

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  • Yinchi Liu,
  • Xun Lu,
  • Shiyu Li,
  • Hao Zhang,
  • Jining Yang,
  • Yeye Guo,
  • Dmitriy Anatolyevich Golosov,
  • Chenjie Gu,
  • Hongliang Lu,
  • Zhigang Ji,
  • Shijin Ding,
  • Wenjun Liu

摘要

The ferroelectric field-effect transistor (FeFET) with an amorphous indium–gallium–zinc oxide (α-IGZO) channel and an atomic-layer-deposited 2 nm HfO2 interfacial layer (IL) was designed and fabricated to optimize both memory window (MW) and reliability. Compared with the FeFET without IL, the FeFET with 2 nm HfO2 IL achieved an enhanced MW of 1.1 V at a reliable operating voltage with ultrafast current-voltage operation and an approximately 1000 times improvement in endurance with an available MW of ∼0.85 V after exerting pulses over 107 cycles while maintaining retention of over 10 years. This work proposes an effective strategy to enhance MW and reliability for future nonvolatile memory applications.