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<p>Hafnium oxide (HfO<sub>2</sub>) is a promising ferroelectric material because of its robust electric dipoles at the nanoscale. Although HfO<sub>2</sub> is an oxygen-displacement-induced ferroelectric material, a comprehensive understanding of the intricate relationship between its electrical performance and oxygen-related processes is still limited. This study delves into the ferroelectric and dielectric properties of Zr-doped HfO<sub>2</sub> (Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>, HZO) thin films, unveiling a reliance on the oxygen dose during the atomic layer deposition process. A superior remanent polarization (2<i>P</i><sub><i>r</i></sub>) of 58 µC/cm<sup>2</sup> and a high dielectric constant of 52.7 are obtained in the HZO capacitors with 10 and 1 s oxygen plasma durations, respectively. Our work establishes that the enhanced ferroelectricity observed in samples with longer oxygen dose time is attributed to the gradual out-of-plane orientation of the polar <i>c</i>-axis, as indicated by grazing incidence wide-angle X-ray scattering analysis. Meanwhile, the larger dielectric constant observed in samples with the shortest oxygen dose time (1 s) originates from the out-of-plane tilt of the <i>b</i>-axis in an orthorhombic-phase cell. These new insights into the controlled crystal orientation through oxygen dose modulation open avenues for optimizing the performance of the HfO<sub>2</sub>-based devices.</p>

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Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films

  • 期刊论文

  • 发表日期：

    2025年5月22日

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  • Yu-Chun Li,
  • Xiao-Xi Li,
  • Zhongshan Xu,
  • Zi-Ying Huang,
  • Yingguo Yang,
  • Xiao-Na Zhu,
  • Ming Li,
  • David Wei Zhang,
  • Hong-Liang Lu

摘要

Hafnium oxide (HfO2) is a promising ferroelectric material because of its robust electric dipoles at the nanoscale. Although HfO2 is an oxygen-displacement-induced ferroelectric material, a comprehensive understanding of the intricate relationship between its electrical performance and oxygen-related processes is still limited. This study delves into the ferroelectric and dielectric properties of Zr-doped HfO2 (Hf0.5Zr0.5O2, HZO) thin films, unveiling a reliance on the oxygen dose during the atomic layer deposition process. A superior remanent polarization (2Pr) of 58 µC/cm2 and a high dielectric constant of 52.7 are obtained in the HZO capacitors with 10 and 1 s oxygen plasma durations, respectively. Our work establishes that the enhanced ferroelectricity observed in samples with longer oxygen dose time is attributed to the gradual out-of-plane orientation of the polar c-axis, as indicated by grazing incidence wide-angle X-ray scattering analysis. Meanwhile, the larger dielectric constant observed in samples with the shortest oxygen dose time (1 s) originates from the out-of-plane tilt of the b-axis in an orthorhombic-phase cell. These new insights into the controlled crystal orientation through oxygen dose modulation open avenues for optimizing the performance of the HfO2-based devices.