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<p>In conclusion, we have proposed a simple yet effective approach by implementing composite-ETs to regulate the E-field at the anode edge to enhance the BV of large-area vertical <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> SBDs. High BV = 1.56 kV @ <i>I</i><sub>R</sub> &lt; 100 µA and <i>I</i><sub>F</sub> = 12 A @ <i>V</i><sub>F</sub> = 2 V as well as <i>I</i><sub>F</sub> = 30 A @ <i>V</i><sub>F</sub> = 4.2 V are all simultaneously achieved. These results significantly outperform other high-current and high-voltage <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> SBDs and advance <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> research from the laboratory level to commercial products.</p>

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1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations

  • 期刊论文

  • 发表日期：

    2025年1月14日

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  • Yitao Feng,
  • Hong Zhou,
  • Sami Alghamdi,
  • Hao Fang,
  • Xiaorong Zhang,
  • Yanbo Chen,
  • Guotao Tian,
  • Saud Wasly,
  • Yue Hao,
  • Jincheng Zhang

摘要

In conclusion, we have proposed a simple yet effective approach by implementing composite-ETs to regulate the E-field at the anode edge to enhance the BV of large-area vertical β-Ga2O3 SBDs. High BV = 1.56 kV @ IR < 100 µA and IF = 12 A @ VF = 2 V as well as IF = 30 A @ VF = 4.2 V are all simultaneously achieved. These results significantly outperform other high-current and high-voltage β-Ga2O3 SBDs and advance β-Ga2O3 research from the laboratory level to commercial products.