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<p>Ultraviolet photodetectors have a wide range of applications, covering optical analysis, environmental detection, and security solutions. While silicon is extensively used in photodetection, the performance of silicon-based photodetectors in the ultraviolet spectrum is poorer compared to that in the visible range due to limited absorption depth and high reflectivity. To enhance its ultraviolet sensing capabilities, a graphene/truncated silicon cones heterostructure-based photodetector is proposed to simultaneously increase the light-trapping effect and create ultra-shallow Schottky junctions. The design reduces the reflectivity to &lt;12% in the ultraviolet (UV) range, less than 20% of the original value. The graphene/truncated silicon cone photodetectors can achieve responsivity and external quantum efficiency that exceed 0.32 A/W and 113% at a wavelength of 360 nm, respectively. By analyzing the experimental and simulation results, it is confirmed that the elevated performance is a consequence of the combined effects of light-trapping, shallow junction, and impact ionization. Our approach in combining graphene with nanostructured silicon shows promise in future large-scale CMOS integration and high-performance optoelectronic applications.</p>

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High quantum efficiency ultraviolet photodetector based on graphene and truncated silicon nanocones

  • 期刊论文

  • 发表日期：

    2025年2月27日

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  • Feng Tian,
  • Shaoxiong Wu,
  • Xinyu Liu,
  • Baoshi Qiao,
  • Dong Pu,
  • Zongwen Li,
  • Cheng Chen,
  • Xiaoxue Cao,
  • Srikrishna Chanakya Bodepudi,
  • Muhammad Abid Anwar,
  • Xiaochen Wang,
  • Yuda Zhao,
  • Bin Yu,
  • Tawfique Hasan,
  • Huan Hu,
  • Yang Xu

摘要

Ultraviolet photodetectors have a wide range of applications, covering optical analysis, environmental detection, and security solutions. While silicon is extensively used in photodetection, the performance of silicon-based photodetectors in the ultraviolet spectrum is poorer compared to that in the visible range due to limited absorption depth and high reflectivity. To enhance its ultraviolet sensing capabilities, a graphene/truncated silicon cones heterostructure-based photodetector is proposed to simultaneously increase the light-trapping effect and create ultra-shallow Schottky junctions. The design reduces the reflectivity to <12% in the ultraviolet (UV) range, less than 20% of the original value. The graphene/truncated silicon cone photodetectors can achieve responsivity and external quantum efficiency that exceed 0.32 A/W and 113% at a wavelength of 360 nm, respectively. By analyzing the experimental and simulation results, it is confirmed that the elevated performance is a consequence of the combined effects of light-trapping, shallow junction, and impact ionization. Our approach in combining graphene with nanostructured silicon shows promise in future large-scale CMOS integration and high-performance optoelectronic applications.