β-Ga2O3 solar-blind ultraviolet light detector with infinite PDCR
摘要
Ultra-high photo-dark current ratio (PDCR) has always been a fascinating indicator for photodetectors. In this paper, the β-Ga2O3 solar-blind ultraviolet (UV) light detector with Ni-Ni double Schottky-junctions structure is prepared. The detector has an ultra-high PDCR value exceeding 108 under 254 nm UV light irradiation. The physical mechanism behind this phenomenon is to control the current competition between the two Schottky junctions by setting the drain voltage Vd and the source voltage Vs. When the flowing direction of the current in the device is converted, the current balance point B at which the dark current Id(dark) is zero appears during the conversion. Theoretically, at B point, PDCR should be infinite if the photo-current Id(photo) is not 0. In the experiment, B point where Id(dark) is actually 0 is obtained at Vd = 10.1 V in the Vd-Id curve under Vs = 20 V and Id(photo) at B point is 8.52 µA, so the infinite PDCR realizes at B point. This paper provides new insight into Ga2O3 solar blind UV detectors.