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<p>Defect engineering is widely regarded as an effective strategy to reduce lattice thermal conductivity (<i>κ</i><sub>lat</sub>) in the field of thermoelectrics. Herein, we demonstrate that nominal Mg deficiency can improve Mg vacancy (V<sub>Mg</sub>) concentration in Mg<sub>2</sub>Sn<sub>0.8</sub>Sb<sub>0.2</sub> due to the adaptive lattice featured by Mg<sub>2</sub>Sn-Mg<sub>3</sub>Sb<sub>2</sub> bistructural pseudocontinuous solid solution. V<sub>Mg</sub> tends to aggregate into nanoclusters to mitigate the impairment to the electrical transport. Consequently, an extremely low <i>κ</i><sub>lat</sub> of ∼0.76 W m<sup>−1</sup> K<sup>−1</sup> and the highest <i>zT</i> value of ∼1.43 are obtained at 773 K in nominal Mg<sub>1.94</sub>Sn<sub>0.8</sub>Sb<sub>0.2</sub>. A fairly high average figure of merit value of 0.77 is also obtained at 303–773 K. Moreover, the as-fabricated single-leg device shows a high output power of 146 mW and conversion efficiency of 7.2% at a temperature difference of 410 K. This work highlights the substantial potential of Mg<sub>2</sub>(Sn, Sb)-based materials for practical applications of power generation and thermal management.</p>

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Adaptive lattice elevating Mg vacancy concentration enhances thermoelectric performance in Mg2−xSn0.8Sb0.2

  • 期刊论文

  • 发表日期：

    2026年6月15日

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  • Yongbin Zhu,
  • Feng Jiang,
  • Zhiyan Hu,
  • Yupeng Wang,
  • Haijun Zhang,
  • Shicai Xu,
  • Xinzhi Wu,
  • Weishu Liu

摘要

Defect engineering is widely regarded as an effective strategy to reduce lattice thermal conductivity (κlat) in the field of thermoelectrics. Herein, we demonstrate that nominal Mg deficiency can improve Mg vacancy (VMg) concentration in Mg2Sn0.8Sb0.2 due to the adaptive lattice featured by Mg2Sn-Mg3Sb2 bistructural pseudocontinuous solid solution. VMg tends to aggregate into nanoclusters to mitigate the impairment to the electrical transport. Consequently, an extremely low κlat of ∼0.76 W m−1 K−1 and the highest zT value of ∼1.43 are obtained at 773 K in nominal Mg1.94Sn0.8Sb0.2. A fairly high average figure of merit value of 0.77 is also obtained at 303–773 K. Moreover, the as-fabricated single-leg device shows a high output power of 146 mW and conversion efficiency of 7.2% at a temperature difference of 410 K. This work highlights the substantial potential of Mg2(Sn, Sb)-based materials for practical applications of power generation and thermal management.