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<p>This paper investigates the contradictory phenomenon observed during the annealing process of Cr/Au thin films on fused silica resonators: a decrease in internal friction dissipation accompanied by an increase in resistivity. To resolve this contradiction, an innovative thin-film process that suppresses diffusion is proposed. By establishing models for film resistive thermal dissipation and grain boundary friction energy dissipation, the study reveals that the contradiction stems from Cr atomic diffusion at interfaces during annealing. This process causes a sharp increase in resistivity, with the sheet resistance of Cr/Au films rising from 4.2 to 41.8 Ω/sq after 2 h of annealing. Concurrently, annealing-induced grain coarsening reduces internal friction, extending vibration decay time from 50 to 127 s. Introducing a W diffusion barrier layer between Cr and Au films, followed by 1-hour annealing at 500°C, eliminates observable Cr diffusion layers in high-resolution TEM images. This reduces sheet resistance by 34% without significant degradation in Q-factor. Experimental characterization confirms that this structure blocks the Cr/Au alloying pathway, significantly suppressing resistance degradation while maintaining low grain boundary friction loss. This approach provides a synergistically optimized solution for fused silica resonators, combining low internal friction with low resistance characteristics, thereby overcoming the limitations of conventional annealing processes.</p>

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High conductivity and low damping thin films for fused silica resonators via atomic diffusion suppression during annealing

  • 期刊论文

  • 发表日期：

    2026年6月16日

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  • Feng Zhu,
  • Xuezhong Wu,
  • Dingbang Xiao,
  • Xiang Xi,
  • Yan Shi

摘要

This paper investigates the contradictory phenomenon observed during the annealing process of Cr/Au thin films on fused silica resonators: a decrease in internal friction dissipation accompanied by an increase in resistivity. To resolve this contradiction, an innovative thin-film process that suppresses diffusion is proposed. By establishing models for film resistive thermal dissipation and grain boundary friction energy dissipation, the study reveals that the contradiction stems from Cr atomic diffusion at interfaces during annealing. This process causes a sharp increase in resistivity, with the sheet resistance of Cr/Au films rising from 4.2 to 41.8 Ω/sq after 2 h of annealing. Concurrently, annealing-induced grain coarsening reduces internal friction, extending vibration decay time from 50 to 127 s. Introducing a W diffusion barrier layer between Cr and Au films, followed by 1-hour annealing at 500°C, eliminates observable Cr diffusion layers in high-resolution TEM images. This reduces sheet resistance by 34% without significant degradation in Q-factor. Experimental characterization confirms that this structure blocks the Cr/Au alloying pathway, significantly suppressing resistance degradation while maintaining low grain boundary friction loss. This approach provides a synergistically optimized solution for fused silica resonators, combining low internal friction with low resistance characteristics, thereby overcoming the limitations of conventional annealing processes.