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<p>Apart from the inherent material characteristics, the regulation of device performance is also inseparable from the interface states for photodetector (PD) devices. In this paper, a <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>/Sn-Ga<sub>2</sub>O<sub>3</sub> film was prepared by a facile-plasma enhanced chemical vapor deposition technology to explore the impact of n-N homogeneous interface design on the performance of PD. Thanks to the formation of a depletion layer on the Sn-Ga<sub>2</sub>O<sub>3</sub> side at the homogeneous interface, a self-powered supply with an open-circuit voltage of ∼100 mV is successfully achieved. Moreover, a peculiar phenomenon that the rectification direction of the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>/Sn-Ga<sub>2</sub>O<sub>3</sub> n-N homojunction device can be controlled by light irradiation is also worthy of attention, which should be fundamentally attributed to the reversal of Fermi-levels controlled by light irradiation. In this case, the photo-to-dark current ratio can reach up to 1.19 × 10<sup>5</sup> under the voltage of 5 V. To a certain extent, this work implies the potential application prospects of the homogeneous structural interface design through same-type doped concentrations difference on the high-performance PDs.</p>

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Boosting the performance of β-Ga2O3/Sn-Ga2O3 n-N homojunction deep ultraviolet photodetector via interfacial Fermi-level reversal

  • 期刊论文

  • 发表日期：

    2025年4月15日

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  • Muzi Li,
  • Zhaoying Xi,
  • Min Li,
  • Maolin Zhang,
  • Shan Li,
  • Xueqiang Ji,
  • Zhang Zhang,
  • Lili Yang,
  • Weihua Tang

摘要

Apart from the inherent material characteristics, the regulation of device performance is also inseparable from the interface states for photodetector (PD) devices. In this paper, a β-Ga2O3/Sn-Ga2O3 film was prepared by a facile-plasma enhanced chemical vapor deposition technology to explore the impact of n-N homogeneous interface design on the performance of PD. Thanks to the formation of a depletion layer on the Sn-Ga2O3 side at the homogeneous interface, a self-powered supply with an open-circuit voltage of ∼100 mV is successfully achieved. Moreover, a peculiar phenomenon that the rectification direction of the β-Ga2O3/Sn-Ga2O3 n-N homojunction device can be controlled by light irradiation is also worthy of attention, which should be fundamentally attributed to the reversal of Fermi-levels controlled by light irradiation. In this case, the photo-to-dark current ratio can reach up to 1.19 × 105 under the voltage of 5 V. To a certain extent, this work implies the potential application prospects of the homogeneous structural interface design through same-type doped concentrations difference on the high-performance PDs.