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<p>This paper presents MCFlash, a practical and immediately deployable technique for executing bulk bitwise operations directly within commercial off-the-shelf (COTS) 3D NAND flash chips. MCFlash relies solely on standard user-mode instructions, combining Multi-Level Cell (MLC) data encodings with dynamically tuned read reference voltages to execute in-place bitwise operations. We evaluate MCFlash across diverse NAND flash chips, both floating gate and charge-trap variants, from different generations. Our results represent the first demonstration of error-free, on-chip bitwise operations, sustaining over one billion operations on fresh blocks and maintaining bit error rates below 0.015% even after 10,000 program/erase (P/E) cycles.</p>

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MCFlash: bulk bitwise processing in 3D NAND with dynamic sensing and multi-level encoding

  • 期刊论文

  • 发表日期：

    2026年5月26日

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  • Habib Ur Rahman,
  • Tharini Suresh,
  • Sudeep Pasricha,
  • Biswajit Ray

摘要

This paper presents MCFlash, a practical and immediately deployable technique for executing bulk bitwise operations directly within commercial off-the-shelf (COTS) 3D NAND flash chips. MCFlash relies solely on standard user-mode instructions, combining Multi-Level Cell (MLC) data encodings with dynamically tuned read reference voltages to execute in-place bitwise operations. We evaluate MCFlash across diverse NAND flash chips, both floating gate and charge-trap variants, from different generations. Our results represent the first demonstration of error-free, on-chip bitwise operations, sustaining over one billion operations on fresh blocks and maintaining bit error rates below 0.015% even after 10,000 program/erase (P/E) cycles.