Analysis of Si/GaSb Stacked Source Vertical TFET Biosensor for Breast Cancer Detection
摘要
Biosensors are developing into an effective tool for detecting biomarkers related to the initiation, progression, and therapeutic response of breast cancer, which facilitates early diagnosis. This work proposes a hetero-stacked source Vertical Tunnel Field Effect Transistor (HS-V-TFET) biosensor designed to detect cancerous breast cell lines (CBCL). The sensor features nanogaps located under the gate electrodes near the source, where breast cells will be immobilized. The differences in dielectric properties between malignant and benign breast cells create distinct conductivity profiles that enable their differentiation. The proposed HS-V-TFET is designed using the SILVACO ATLAS TCAD program, and the simulated results are investigated to thoroughly analyze the surface potential, electric field, and energy band diagram. Practical functionality is analyzed by including various instances of partially and unevenly filled cavities and mixed cell proportions inside the cavity. The efficacy of the developed biosensor is established by dint of sensitivity analysis by measuring the drain current, threshold voltage, transconductance, and ION/IOFF ratio. The drain current sensitivity, ION/IOFF Sensitivity, threshold voltage sensitivity, selectivity and limit of detection (LOD) are found to be 2.61 × 1013, 6.26 × 1010, 85.2%, 5.2 × 102 and 1.48 respectively for cancerous breast cell lines T-47D. Furthermore, the linearity, noise performance, stability analysis and effect of temperature on the sensing characteristics for different breast cancer cell types have been comprehensively investigated. Comparative analysis with the state-of-the-art techniques demonstrates a significant enhancement in sensitivity of the proposed biosensor, thereby rendering it suitable for biosensing application.