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<p>The present paper presents the preparation and characterization of pure SnO<sub>2</sub> and Cu-doped SnO<sub>2</sub> (SnO<sub>2</sub>:Cu) nanostructured thin films prepared by chemical spray pyrolysis method (CSPM) to improve NH<sub>3</sub> and NO<sub>2</sub> gas sensing performance. The deposition of the films on glass substrates was carried out at 350&#xa0;°C with use of 0.02&#xa0;M solutions with dopant amounts of 1%, 3%, and 5% of copper. From the XRD analysis, it follows that all samples are polycrystalline with the tetragonal rutile crystal structure, and no impurity phases have been detected. With increasing the amount of doped Cu, crystallite size is slightly reduced. From AFM and FESEM investigations, it can be noted that doping with copper has led to the increase of the active surface area due to its homogenization as well as reduction in the grain size and surface roughness. EDS confirmed that copper was successfully incorporated and that the films were free of contamination. According to optical studies, the direct band gap energy was found to increase from 3.73&#xa0;eV in pure SnO<sub>2</sub> films to 3.88&#xa0;eV at a 5% Cu doping concentration, which has been explained in terms of quantum confinement. Based on the Hall Effect measurements showed that all films were n-type, and doping led to a higher carrier concentration. The results obtained in gas sensing showed that the SnO<sub>2</sub> thin films containing 1% Cu exhibited high sensitivity towards NH<sub>3</sub> and NO<sub>2</sub> gases with a maximum value of 24.8% and 96.14%, respectively, at 200&#xa0;°C with very high response and recovery time. In general, the findings reveal that the optimum amount of Cu doping could enhance the gas sensing properties of SnO<sub>2</sub> thin films by increasing their surface reactivity and forming p-n junctions.</p>

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Enhanced Structural, Morphological, Optical, and Electrical Properties of Cu-Doped SnO2 for Gas Sensing Performance

  • 期刊论文

  • 发表日期：

    2026年5月28日

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  • J. F. Mohammad,
  • Ruaa H. Jasim,
  • Abdalhameed A. Hameed,
  • Bilal K. Al-Rawi

摘要

The present paper presents the preparation and characterization of pure SnO2 and Cu-doped SnO2 (SnO2:Cu) nanostructured thin films prepared by chemical spray pyrolysis method (CSPM) to improve NH3 and NO2 gas sensing performance. The deposition of the films on glass substrates was carried out at 350 °C with use of 0.02 M solutions with dopant amounts of 1%, 3%, and 5% of copper. From the XRD analysis, it follows that all samples are polycrystalline with the tetragonal rutile crystal structure, and no impurity phases have been detected. With increasing the amount of doped Cu, crystallite size is slightly reduced. From AFM and FESEM investigations, it can be noted that doping with copper has led to the increase of the active surface area due to its homogenization as well as reduction in the grain size and surface roughness. EDS confirmed that copper was successfully incorporated and that the films were free of contamination. According to optical studies, the direct band gap energy was found to increase from 3.73 eV in pure SnO2 films to 3.88 eV at a 5% Cu doping concentration, which has been explained in terms of quantum confinement. Based on the Hall Effect measurements showed that all films were n-type, and doping led to a higher carrier concentration. The results obtained in gas sensing showed that the SnO2 thin films containing 1% Cu exhibited high sensitivity towards NH3 and NO2 gases with a maximum value of 24.8% and 96.14%, respectively, at 200 °C with very high response and recovery time. In general, the findings reveal that the optimum amount of Cu doping could enhance the gas sensing properties of SnO2 thin films by increasing their surface reactivity and forming p-n junctions.