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<p>Pseudomonas bacterium, one of the most dangerous organisms that cause hospital-acquired infections, has developed over time and has become increasingly resistant to existing therapies. Specificity, sensitivity, and speed are the essential requirements for bacterial detection techniques. In this work, a Pseudomonas bacteria detector based on a binary photonic crystal with an n-doped semiconducting material is considered. The optical properties of the semiconducting material are functions of the applied magnetic field and the concentration of electrons. The tuning of the sensitivity with the variation of the applied magnetic field, n-doped semiconductor layer thickness, and concentration of electrons is investigated. The sensitivity is found to be strongly dependent with the parameters of the n-doped semiconductor. Increasing the applied magnetic field and the concentration of electrons of the semiconductor can enhance the sensitivity. The optimum thickness of the semiconductor layer that corresponds to the highest sensitivity (230.452&#xa0;nm/RIU) and quality factor (550.393) is found at 860&#xa0;nm n-GaAs thickness.</p>

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Tunable Sensitivity of Pseudomonas Bacterial Sensor Based on a Binary Photonic Crystal with an n-Doped Semiconductor Layer

  • 期刊论文

  • 发表日期：

    2026年4月22日

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  • Khedr M. Abohassan,
  • Nael Doghmosh,
  • Anas A. M. Alqanoo,
  • Marwa Mohammed Khaled

摘要

Pseudomonas bacterium, one of the most dangerous organisms that cause hospital-acquired infections, has developed over time and has become increasingly resistant to existing therapies. Specificity, sensitivity, and speed are the essential requirements for bacterial detection techniques. In this work, a Pseudomonas bacteria detector based on a binary photonic crystal with an n-doped semiconducting material is considered. The optical properties of the semiconducting material are functions of the applied magnetic field and the concentration of electrons. The tuning of the sensitivity with the variation of the applied magnetic field, n-doped semiconductor layer thickness, and concentration of electrons is investigated. The sensitivity is found to be strongly dependent with the parameters of the n-doped semiconductor. Increasing the applied magnetic field and the concentration of electrons of the semiconductor can enhance the sensitivity. The optimum thickness of the semiconductor layer that corresponds to the highest sensitivity (230.452 nm/RIU) and quality factor (550.393) is found at 860 nm n-GaAs thickness.