Design and Analysis of 10 nm p + Pocket NCDGMOSFET as Biosensor
摘要
Biosensors help in the detection of biological changes in air or human beings in terms of specific concentration of biomolecule, bio potential and variations in electrical parameters due to the presence of a virus or infected tissues. BioFETs were demonstrated in research showing their sensitivity towards the specific size, concentration and charge present on biomolecules. QueryIn this work, p + pocket negative capacitance double gate MOSFET (NCDGMOSFET) with HfO2FE (ferroelectric) is designed and performance is analysed using TCAD software. The use of ferroelectric material improves subthreshold performance by reducing leakage current due HFO2FE-SiO2 interface and also improves transistor transconductance and intrinsic gain. The designed 10 nm p + Pocket NCDGMOSFET is further analysed as biosensor in terms of percentage changes in electrical parameters such as variation in dielectric constant, drain current and sensitivity. The nanogap cavity regions are introduced under the gate of NCDGMOSFET to explore the device properties as a biosensor with cavity length of 3 nm and 5 nm. The proposed NCDGMOSFET as a biosensor shows significant variations in electrical parameters with small variations in dielectric constant and charge present in the nanogap cavity regions. Considering the range of dielectric constant for protein (k = 2 to 5), the cavity region material is varied which shows a maximum change in drain current up to 27.8% for cavity dielectric material S3N4 (k = 7.5).