A Virtually Doped Hetero Z-Shaped Charge Plasma TFET Based Label Free Biosensor
摘要
The sensing performance of dielectrically modulated heterojunction charge‑plasma tunnel field‑effect transistor (DM-HJ-CPTFET) structure based on the technique of charge plasma with misaligned cavity for biosensing applications has been examined in this work. To employ charge plasma technique appropriate metal work function is used. The use of a narrow band gap material in the source region allows TFETs to have a higher ON current. The sensitivity of the sensor is governed by the dielectric constant and the charge density of bio samples. The performance of biosensors has been analyzed using distinct sensing metrics such as transconductance‑to‑drain‑current ratio (gm/Ids), subthreshold swing, and current sensitivity. The drain current sensitivity is observed to be 5 times higher than the previous work. The step profile analysis of bio samples shows that the biosensor sensitivity is subject to the placement of biomolecules within the cavity than on the filling factor. Silvaco ‘ATLAS’ device simulator has been used to implement the proposed device and run all simulations.