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<p>In this study, the authors have presented a 2-D analytical model for a silicon-based source underlap SiGe p-type pocket layer dopingless TFET biosensor for label free detection of neutral biomolecules. The theoretical model demonstrates strong alignment with the simulated data acquired from Silvaco TCAD. The utilization of a charge plasma-based approach has facilitated the eradication of random dopant fluctuations and the reduction of the thermal budget, which are inherent shortcomings of conventional TFET. A nanogap cavity was incorporated under the source electrode to enable immobilization of the neutral biomolecules. The inclusion of the SiGe pocket layer at the source-channel interface enhanced the tunneling probability, resulting in a significant increase in the device's sensitivity. The highest drain current sensitivity obtained for the proposed device is <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\sim 4.213\times {10}^{11}\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo>∼</mo> <mn>4.213</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mn>11</mn> </msup> </mrow> </math></EquationSource> </InlineEquation>. This model shows substantial potential for developing high-speed switching biosensor devices in the future generation.</p>

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Dopingless TFET Biosensor with Source Underlap p- SiGe Pocket: Analytical Modelling and Simulation

  • 期刊论文

  • 发表日期：

    2025年1月6日

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  • Jayabrata Goswami,
  • Oindrila Chatterjee,
  • Bratati Mukhopadhyay

摘要

In this study, the authors have presented a 2-D analytical model for a silicon-based source underlap SiGe p-type pocket layer dopingless TFET biosensor for label free detection of neutral biomolecules. The theoretical model demonstrates strong alignment with the simulated data acquired from Silvaco TCAD. The utilization of a charge plasma-based approach has facilitated the eradication of random dopant fluctuations and the reduction of the thermal budget, which are inherent shortcomings of conventional TFET. A nanogap cavity was incorporated under the source electrode to enable immobilization of the neutral biomolecules. The inclusion of the SiGe pocket layer at the source-channel interface enhanced the tunneling probability, resulting in a significant increase in the device's sensitivity. The highest drain current sensitivity obtained for the proposed device is \(\sim 4.213\times {10}^{11}\) ∼ 4.213 × 10 11 . This model shows substantial potential for developing high-speed switching biosensor devices in the future generation.