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<p>This study compares substrate-related defect sources in 2D materials on h‑BN, AlN under He, O, and Ar irradiation. Using Monte Carlo simulations (100 eV–100 MeV), the energy transfer to sputtered atoms and electrons is quantified along with the backscattering rate. Sputtering peaks occur at 5–107 keV (h-BN) and 6–390 keV (AlN). Backscattering reaches 20% only for light ions, while electronic heating dominates at high energies. The results provide a&#xa0;guide for nitrogen doping and defect engineering.</p>

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Dielectric substrates as defect sources in two-dimensional materials under ion irradiation

  • 期刊论文

  • 发表日期：

    2026年7月9日

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  • E. A. Kolesov

摘要

This study compares substrate-related defect sources in 2D materials on h‑BN, AlN under He, O, and Ar irradiation. Using Monte Carlo simulations (100 eV–100 MeV), the energy transfer to sputtered atoms and electrons is quantified along with the backscattering rate. Sputtering peaks occur at 5–107 keV (h-BN) and 6–390 keV (AlN). Backscattering reaches 20% only for light ions, while electronic heating dominates at high energies. The results provide a guide for nitrogen doping and defect engineering.