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<p>The paper studies the aluminum (Al) and gallium (Ga) mixture combustion in a&#xa0;closed reactor under a&#xa0;5 MPa pressure of gas nitrogen. Investigations include the influence of the gallium content in the initial Al-Ga mixture on the amount of absorbed nitrogen, combustion rate, maximum combustion temperature, and phase composition of the products obtained. The paper investigates the microstructure of the nitrided product based on a&#xa0;mixture of 50 wt.% Al and 50 wt.% Ga. The increased Ga content in the initial mixture leads to a&#xa0;decrease in the maximum combustion temperature, combustion rate, and the amount of absorbed nitrogen. When the gallium content in the initial mixture exceeds 70 wt.%, the combustion reaction fails in self-propagating synthesis. After nitriding the Al and 10 wt.% Ga mixture in the combustion mode, the obtained products consist of the AlGaN phase. At 70 wt.% Ga, the AlGaN phase stoichiometry ranges from Al<sub>0.99</sub>Ga<sub>0.01</sub> N to Al<sub>0.85</sub>Ga<sub>0.15</sub>N. The structure of the obtained products consists of shapeless particles, globules, and elongated bars comprising lamellas. The Al‑, Ga- and N‑based compound is present in the form of shapeless particles.</p>

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SHS method of Al and Ga mixture nitriding under high nitrogen pressure

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • A. A. Reger,
  • P. E. Vashurkin

摘要

The paper studies the aluminum (Al) and gallium (Ga) mixture combustion in a closed reactor under a 5 MPa pressure of gas nitrogen. Investigations include the influence of the gallium content in the initial Al-Ga mixture on the amount of absorbed nitrogen, combustion rate, maximum combustion temperature, and phase composition of the products obtained. The paper investigates the microstructure of the nitrided product based on a mixture of 50 wt.% Al and 50 wt.% Ga. The increased Ga content in the initial mixture leads to a decrease in the maximum combustion temperature, combustion rate, and the amount of absorbed nitrogen. When the gallium content in the initial mixture exceeds 70 wt.%, the combustion reaction fails in self-propagating synthesis. After nitriding the Al and 10 wt.% Ga mixture in the combustion mode, the obtained products consist of the AlGaN phase. At 70 wt.% Ga, the AlGaN phase stoichiometry ranges from Al0.99Ga0.01 N to Al0.85Ga0.15N. The structure of the obtained products consists of shapeless particles, globules, and elongated bars comprising lamellas. The Al‑, Ga- and N‑based compound is present in the form of shapeless particles.