Effect of low-temperature plasma on laser-induced damage threshold of nonlinear ZnGeP2 crystals
摘要
The paper investigates the surface treatment by low-temperature plasma affecting the laser-induced damage threshold of ZnGeP2 single crystals. It is found that the surface exposure to plasma with the electron density of 1014 to 1015 cm–3, 13–20 kV voltage, and 50–100 Hz pulse frequency for 500,000 pulses with a duration of ~40 ns, leads to an increase in the damage threshold by 30%. This effect is attributed to the thickness reduction of the damaged near-surface layer.