<p>Using low-pressure ICP discharge, isotopically pure ²⁸Si was obtained from ²⁸SiF₄. The dependence of the ²⁸SiF₄ conversion degree and the yield of the main reaction products on the composition of the initial mixture and the reagent ratio were studied. Optimum conditions providing a high conversion degree of SiF₄ were found. It was shown that along with the formation of silicon with a degree of conversion of SiF₄ into silicon equal to 85%, an insignificant formation (no more than 5% conversion of SiF₄ into SiHF₃) of SiHF₃ is observed. The physical parameters of the T_e, N_e plasma and the composition of active particles in it depend on the H₂/Ar/SiF₄ gas mixture ratio. Under optimal conditions, a sample of polycrystalline isotopically enriched ²⁸Si with an enrichment degree of 99.76% was obtained. Its impurity, isotopic and phase composition, as well as surface morphology and Raman spectra were studied. The obtained high-purity and isotopically pure silicon can be used as a material for creating a quantum computer and highly sensitive detectors of ionizing radiation.</p>