Scholarlink

<p>Cooling the substrate to stimulate chemical reactions can seem rather counterintuitive. However, this is one of the advantages often observed in plasma cryogenic etching. This article discusses the interactions between plasma and the surface at low temperature. It begins by reviewing the fundamental theories of adsorption as applied to etching. The theoretical concepts are then illustrated in the second part of the article by two different cryogenic processes developed and studied as part of research programs: the reinforcement of the SiO<sub>x</sub>F<sub>y</sub> passivation layer in the STiGer cryogenic deep silicon etching process and cryogenic Atomic Layer Etching (cryo-ALE) of SiO<sub>2</sub> from physisorbed C<sub>4</sub>F<sub>8</sub> molecules.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Chemistry in Cryogenic Etching: A Tutorial

  • 期刊论文

  • 发表日期：

    2025年12月11日

查看全文
  • Remi Dussart,
  • Gaelle Antoun,
  • Thomas Tillocher,
  • Loic Becerra,
  • Philippe Lefaucheux

摘要

Cooling the substrate to stimulate chemical reactions can seem rather counterintuitive. However, this is one of the advantages often observed in plasma cryogenic etching. This article discusses the interactions between plasma and the surface at low temperature. It begins by reviewing the fundamental theories of adsorption as applied to etching. The theoretical concepts are then illustrated in the second part of the article by two different cryogenic processes developed and studied as part of research programs: the reinforcement of the SiOxFy passivation layer in the STiGer cryogenic deep silicon etching process and cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 from physisorbed C4F8 molecules.