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<p>Tin contamination in extreme ultraviolet lithography (EUVL) optics can be partially removed from radical-mediated reactions in hydrogen plasmas by formation of the volatile produce stannane (SnH<sub>4</sub>). Using density functional theory (DFT) and transition state theory (TST), we examine two competing SnH<sub>4</sub>-SnH radical pathways–channel 1 (Sn<sub>2</sub>H<sub>3</sub> + H<sub>2</sub>) and channel 2 (Sn<sub>2</sub>H<sub>5</sub>)--that influence downstream tin deposition. Distinct bonding mechanisms render channel 1 endothermic and tunneling-sensitive, while channel 2 is exothermic, spontaneous, and kinetically dominant under process conditions. These findings provide molecular-level guidance for predicting plasma-driven tin species fluxes to optical surfaces, offering a basis for optimizing contamination control in the EUVL systems.</p>

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Reaction Pathways Between SnH4 and SnH Relevant to EUV Lithography: A DFT and TST Study

  • 期刊论文

  • 发表日期：

    2026年3月4日

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  • Yuwei Ma,
  • Bowen Li

摘要

Tin contamination in extreme ultraviolet lithography (EUVL) optics can be partially removed from radical-mediated reactions in hydrogen plasmas by formation of the volatile produce stannane (SnH4). Using density functional theory (DFT) and transition state theory (TST), we examine two competing SnH4-SnH radical pathways–channel 1 (Sn2H3 + H2) and channel 2 (Sn2H5)--that influence downstream tin deposition. Distinct bonding mechanisms render channel 1 endothermic and tunneling-sensitive, while channel 2 is exothermic, spontaneous, and kinetically dominant under process conditions. These findings provide molecular-level guidance for predicting plasma-driven tin species fluxes to optical surfaces, offering a basis for optimizing contamination control in the EUVL systems.