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<p>WS<sub>2</sub> thin films with thicknesses of 10 and 100&#xa0;nm were deposited by RF magnetron sputtering and subsequently annealed at 400&#xa0;°C to investigate the influence of thickness on their structural, optical, and electrical properties. GIXRD and Raman analyses confirmed the formation of nanocrystalline WS<sub>2</sub> and revealed pronounced thickness-dependent variations in crystallinity, lattice disorder, and defect-related vibrational characteristics. Structural analysis further showed an increase in crystallite size accompanied by reduced lattice strain and dislocation density in the thicker film. Optical measurements demonstrated strong excitonic behavior and a systematic red-shift of the emission features with increasing thickness and annealing, together with a reduction in the optical band gap. Hall-effect measurements confirmed n-type conductivity in all investigated films. The thinner WS<sub>2</sub> film exhibited enhanced electrical transport characteristics, reflected by higher carrier concentration and conductivity as well as lower resistivity compared with the thicker film. These findings highlight the strong coupling between thickness, microstructure, and charge transport in sputter-deposited WS<sub>2</sub> and demonstrate that thickness engineering provides an effective strategy for tailoring the performance of WS<sub>2</sub>-based optoelectronic devices.</p>

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Thickness-dependent structural and optical properties of WS₂ thin films prepared by RF magnetron sputtering

  • 期刊论文

  • 发表日期：

    2026年7月21日

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  • Samira Bahadivand Chegini,
  • Mohammad Reza Khanlary,
  • Zahra Pasalari,
  • Saeid Baghshahi,
  • Seyedeh Zahra Mortazavi,
  • Milad Parhizkari

摘要

WS2 thin films with thicknesses of 10 and 100 nm were deposited by RF magnetron sputtering and subsequently annealed at 400 °C to investigate the influence of thickness on their structural, optical, and electrical properties. GIXRD and Raman analyses confirmed the formation of nanocrystalline WS2 and revealed pronounced thickness-dependent variations in crystallinity, lattice disorder, and defect-related vibrational characteristics. Structural analysis further showed an increase in crystallite size accompanied by reduced lattice strain and dislocation density in the thicker film. Optical measurements demonstrated strong excitonic behavior and a systematic red-shift of the emission features with increasing thickness and annealing, together with a reduction in the optical band gap. Hall-effect measurements confirmed n-type conductivity in all investigated films. The thinner WS2 film exhibited enhanced electrical transport characteristics, reflected by higher carrier concentration and conductivity as well as lower resistivity compared with the thicker film. These findings highlight the strong coupling between thickness, microstructure, and charge transport in sputter-deposited WS2 and demonstrate that thickness engineering provides an effective strategy for tailoring the performance of WS2-based optoelectronic devices.