Hysteresis loop modeling using a finite electric field approach accessible via the berry polarization: insights and applications
摘要
Hysteresis loop remains a central experimental signature for characterizing ferroelectric materials. It serves as a critical tool for determining intrinsic properties such as the coercive field, remanent polarization, and spontaneous polarization–parameters that are fundamental for evaluating energy storage efficiency and electrocaloric performance when coupled with thermal effects. Numerous predictive approaches have been proposed, ranging from fundamental to empirical and semi-empirical models. Remarkably, recent theoretical advances in quantum simulations offer a more efficient and physically grounded framework for modeling ferroelectric behavior at the atomistic scale. Notably, the concept of Berry polarization, within a finite electric field framework, enables a comprehensive and physically rigorous modeling of the bulk ground-state hysteresis loop. Building on this foundation, and following a detailed investigation of equilibrium elastic, dielectric, and piezoelectric properties through the lens of Wannier-based chemical bonding analysis for