<p>In this study, we introduce a coupled experimental-computational framework to evaluate indium-doped cerium dioxide (CeO<InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(_2\)</EquationSource> </InlineEquation>) as an engineered electron transport layer (ETL) for a novel tin-based perovskite solar cells (PSC). While pristine CeO<InlineEquation ID="IEq5"> <EquationSource Format="TEX">\(_2\)</EquationSource> </InlineEquation> is widely employed as an ETL, its limited electrical conductivity and suboptimal charge transport properties restrict efficient electron extraction, making dopant-driven modification a critical yet insufficiently quantified strategy. In-doped CeO<InlineEquation ID="IEq6"> <EquationSource Format="TEX">\(_2\)</EquationSource> </InlineEquation> thin films with doping concentration of 0%, 2%, 4%, 6% and 8% are deposited via spray pyrolysis technique. The prepared films are systematically characterized using UV–vis-NIR spectroscopy and Hall-effect measurements to extract their optical and electrical properties. These analysis demonstrates a remarkable enhancement in carrier concentration and mobility, accompanied by a marked increase in electrical conductivity compared with undoped CeO<InlineEquation ID="IEq7"> <EquationSource Format="TEX">\(_2\)</EquationSource> </InlineEquation>, reflecting improved charge transport characteristics within the ETL. The experimentally derived parameters are then incorporated into a 3D optoelectronic model, developed by finite element method (FEM), of the complete device. Significant new results show that doping improves photovoltaic performance. According to the findings, photogeneration (<InlineEquation ID="IEq8"> <EquationSource Format="TEX">\(G_{tot}\)</EquationSource> </InlineEquation>) increases to 3.30 <InlineEquation ID="IEq9"> <EquationSource Format="TEX">\(\times \)</EquationSource> </InlineEquation> <InlineEquation ID="IEq10"> <EquationSource Format="TEX">\(10^{28}\)</EquationSource> </InlineEquation> <InlineEquation ID="IEq11"> <EquationSource Format="TEX">\(m^{-3} s^{-1}\)</EquationSource> </InlineEquation>, short-circuit current density (<InlineEquation ID="IEq12"> <EquationSource Format="TEX">\(J_{sc}\)</EquationSource> </InlineEquation>) to 35.1 <InlineEquation ID="IEq13"> <EquationSource Format="TEX">\(mA/cm^{2}\)</EquationSource> </InlineEquation>, and power-conversion efficiency (PCE) to 32.3% at the doping concentration of 6%. Besides, owing to the important impact of metal electrodes on the device efficiency, we investigated several electrode materials. These results serve as a valuable guide for PSC design and efficiency forecasting before the actual experiment verification.</p>

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Experimental and 3D numerical insights into indium-doped CeO\(_2\) electron transport layers for lead-free perovskite solar cells

  • Fatima Zahrae Kbibech,
  • Abdellatif El-Habib,
  • Abdesamad Aouni,
  • Moussa Kibbou,
  • Elhoussaine Ouabida

摘要

In this study, we introduce a coupled experimental-computational framework to evaluate indium-doped cerium dioxide (CeO \(_2\) ) as an engineered electron transport layer (ETL) for a novel tin-based perovskite solar cells (PSC). While pristine CeO \(_2\) is widely employed as an ETL, its limited electrical conductivity and suboptimal charge transport properties restrict efficient electron extraction, making dopant-driven modification a critical yet insufficiently quantified strategy. In-doped CeO \(_2\) thin films with doping concentration of 0%, 2%, 4%, 6% and 8% are deposited via spray pyrolysis technique. The prepared films are systematically characterized using UV–vis-NIR spectroscopy and Hall-effect measurements to extract their optical and electrical properties. These analysis demonstrates a remarkable enhancement in carrier concentration and mobility, accompanied by a marked increase in electrical conductivity compared with undoped CeO \(_2\) , reflecting improved charge transport characteristics within the ETL. The experimentally derived parameters are then incorporated into a 3D optoelectronic model, developed by finite element method (FEM), of the complete device. Significant new results show that doping improves photovoltaic performance. According to the findings, photogeneration ( \(G_{tot}\) ) increases to 3.30 \(\times \) \(10^{28}\) \(m^{-3} s^{-1}\) , short-circuit current density ( \(J_{sc}\) ) to 35.1 \(mA/cm^{2}\) , and power-conversion efficiency (PCE) to 32.3% at the doping concentration of 6%. Besides, owing to the important impact of metal electrodes on the device efficiency, we investigated several electrode materials. These results serve as a valuable guide for PSC design and efficiency forecasting before the actual experiment verification.