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<p>This study investigates a double-passivation strategy for crystalline silicon solar cells, combining a thermally grown SiO₂ interfacial layer with a roll-on deposited Si(H₂PO₄)₄-derived phosphosilicate glass (PSG). The Si(H₂PO₄)₄ precursor was synthesized via a sol–gel route with varying H₃PO₄ concentrations (20%, 30%, and 40%) and applied onto p-type silicon wafers incorporating either POCl₃-diffused or H₃PO₄-doped emitters. Structural evolution, surface morphology, and photovoltaic performance were systematically correlated. Raman analysis reveals a transition from isolated phosphate units to a more interconnected Si–O–P network with increasing H₃PO₄ concentration. AFM results demonstrate contrasting morphological trends: surface roughness increases from 224.88&#xa0;nm to an optimal 325.59&#xa0;nm for POCl₃ emitters, whereas it decreases from 322.21&#xa0;nm to an optimal 198.67&#xa0;nm for H₃PO₄ emitters. These distinct roughness regimes lead to markedly different performance outcomes. For POCl₃-based devices, increased roughness enhances light trapping and boosts Jsc, improving efficiency from 3.36% to 10.94%; however, excessive surface irregularities limit further gains due to increased recombination. In contrast, H₃PO₄-based devices achieve superior performance at a reduced and optimized surface roughness of 198.67&#xa0;nm, yielding a significant efficiency enhancement from 3.37% to 14.10%, attributed to improved interface uniformity, reduced reflectance, and enhanced carrier collection. These results demonstrate that optimal surface roughness is emitter-dependent, and that controlled morphological tuning, rather than maximized roughness, is critical for achieving high-efficiency silicon solar cells. The proposed roll-on deposited PSG passivation offers a scalable and cost-effective route for simultaneous optimization of optical and electrical properties.</p>

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Structural correlation of Si(H₂PO₄)₄-derived phosphosilicate glass with enhanced passivation for roll-on processed silicon solar cells

  • 期刊论文

  • 发表日期：

    2026年7月17日

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  • Muhd Hatim Rohaizar,
  • Suhaila Sepeai,
  • Ahmad Rujhan Mohd Rais,
  • Norasikin A. Ludin

摘要

This study investigates a double-passivation strategy for crystalline silicon solar cells, combining a thermally grown SiO₂ interfacial layer with a roll-on deposited Si(H₂PO₄)₄-derived phosphosilicate glass (PSG). The Si(H₂PO₄)₄ precursor was synthesized via a sol–gel route with varying H₃PO₄ concentrations (20%, 30%, and 40%) and applied onto p-type silicon wafers incorporating either POCl₃-diffused or H₃PO₄-doped emitters. Structural evolution, surface morphology, and photovoltaic performance were systematically correlated. Raman analysis reveals a transition from isolated phosphate units to a more interconnected Si–O–P network with increasing H₃PO₄ concentration. AFM results demonstrate contrasting morphological trends: surface roughness increases from 224.88 nm to an optimal 325.59 nm for POCl₃ emitters, whereas it decreases from 322.21 nm to an optimal 198.67 nm for H₃PO₄ emitters. These distinct roughness regimes lead to markedly different performance outcomes. For POCl₃-based devices, increased roughness enhances light trapping and boosts Jsc, improving efficiency from 3.36% to 10.94%; however, excessive surface irregularities limit further gains due to increased recombination. In contrast, H₃PO₄-based devices achieve superior performance at a reduced and optimized surface roughness of 198.67 nm, yielding a significant efficiency enhancement from 3.37% to 14.10%, attributed to improved interface uniformity, reduced reflectance, and enhanced carrier collection. These results demonstrate that optimal surface roughness is emitter-dependent, and that controlled morphological tuning, rather than maximized roughness, is critical for achieving high-efficiency silicon solar cells. The proposed roll-on deposited PSG passivation offers a scalable and cost-effective route for simultaneous optimization of optical and electrical properties.