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<p>This study explores the electrical and photoresponse characteristics of Nd: YAG laser-annealed Pt/n-PSi/Pt photodetectors. A porous silicon (PSi) layer was fabricated on single-crystalline n-type Si substrates via photo-electrochemical etching in an aqueous hydrofluoric acid solution at a current density of 45&#xa0;mA/cm² for 30&#xa0;min. The resulting n-PSi layer was subsequently annealed using a Q-switched Nd: YAG laser with a wavelength of 1064&#xa0;nm, pulse duration of 10 ns, and laser energy of 350&#xa0;mJ, at a fluence of 40&#xa0;mJ/cm². The effects of laser irradiation on the morphological and structural properties of the n-PSi were systematically investigated. Atomic force microscopy (AFM) and optical microscopy revealed that the micro/nanostructures and pore morphology of the PSi were strongly influenced by the applied laser fluence. The fabricated photodetectors were evaluated under ultraviolet (UV) light illumination with a wavelength of 380&#xa0;nm and a power density of 1.55 mW/cm². The devices demonstrated a high sensitivity of 951.28%, low dark current, internal photoconductive gain of 10.51, photoresponsivity of 2.01&#xa0;A/W, fast response time of 0.29&#xa0;s, and quick recovery time of 0.44&#xa0;s. The results highlight the effectiveness of Nd: YAG laser annealing for tailoring the structural and electronic properties of n-PSi. What’s new here is the comparative analysis of the properties and photodetection performances between laser annealed and un-annealed samples, thus showing how a systematic approach to laser fluence optimization enhances UV photodetectors (PDs) and provides deeper structural/PL correlation, and broader comparison with modern UV photodetectors (PDs).</p>

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Nd: YAG laser-enhanced UV photoresponse of Pt/n-PSi/Pt photodetectors

  • 期刊论文

  • 发表日期：

    2026年7月10日

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  • Asad A. Thahe,
  • Motahher A. Qaeed,
  • Omar F. Farhat,
  • Nageh K. Allam,
  • Ammar AL-Farga

摘要

This study explores the electrical and photoresponse characteristics of Nd: YAG laser-annealed Pt/n-PSi/Pt photodetectors. A porous silicon (PSi) layer was fabricated on single-crystalline n-type Si substrates via photo-electrochemical etching in an aqueous hydrofluoric acid solution at a current density of 45 mA/cm² for 30 min. The resulting n-PSi layer was subsequently annealed using a Q-switched Nd: YAG laser with a wavelength of 1064 nm, pulse duration of 10 ns, and laser energy of 350 mJ, at a fluence of 40 mJ/cm². The effects of laser irradiation on the morphological and structural properties of the n-PSi were systematically investigated. Atomic force microscopy (AFM) and optical microscopy revealed that the micro/nanostructures and pore morphology of the PSi were strongly influenced by the applied laser fluence. The fabricated photodetectors were evaluated under ultraviolet (UV) light illumination with a wavelength of 380 nm and a power density of 1.55 mW/cm². The devices demonstrated a high sensitivity of 951.28%, low dark current, internal photoconductive gain of 10.51, photoresponsivity of 2.01 A/W, fast response time of 0.29 s, and quick recovery time of 0.44 s. The results highlight the effectiveness of Nd: YAG laser annealing for tailoring the structural and electronic properties of n-PSi. What’s new here is the comparative analysis of the properties and photodetection performances between laser annealed and un-annealed samples, thus showing how a systematic approach to laser fluence optimization enhances UV photodetectors (PDs) and provides deeper structural/PL correlation, and broader comparison with modern UV photodetectors (PDs).