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<p>Organic interfacial layers offer an effective means to tune energy-level alignment and reduce interface-related transport limitations in metal/semiconductor (MS) devices. In this work, Schottky photodiodes with the Au/AA-AMB/n-Si/Au architecture were fabricated to examine the influence of a π-conjugated Schiff base (AA-AMB) interlayer on charge transport under dark and illuminated conditions. Thermionic-emission analysis, supported by Norde functions, showed that illumination lowers the apparent ideality factor while slightly increasing the effective barrier height and reducing the impact of series resistance. These improvements correlate with a significant decrease in the interface-state density (<i>N</i><sub><i>ss</i></sub>), demonstrating that the AA-AMB layer enhances the electronic quality of the metal/organic/Si junction. The photocurrent scaled nearly proportionally with illumination intensity, and the absence of crossover in the small-bias regime confirmed efficient, field-assisted extraction. The intensity-dependent evolution of <i>V</i><sub><i>oc</i></sub>, <i>I</i><sub><i>sc</i></sub>, <i>P</i><sub><i>m</i></sub>, and <i>FF</i> followed typical MS-diode behavior. Power-law fitting yielded β = 1.084, indicative of dominant bimolecular recombination with minor trap participation. Photosensitivity, responsivity, detectivity, and linear dynamic range increased with illumination up to moderate flux before displaying the expected recombination-driven saturation. Overall, the results show that the AA-AMB interlayer effectively suppresses interfacial nonidealities and stabilizes the photoresponse, establishing the Au/AA-AMB/n-Si/Au diode as a promising candidate for photodetection and imaging applications. Notably, the observation of a finite zero-bias photocurrent indicates that the interface-engineered junction supports photovoltaic-effect-driven photodetection without external bias.</p>

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Role of an anthracene-based Schiff-base interlayer in tuning the diode parameters and photoresponse of Au/n-Si Schottky photodiodes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月24日

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  • Ümit Atlihan,
  • Serkan Eymur,
  • Irmak Karaduman Er,
  • Naki Kaya,
  • Nihat Tuğluoğlu

摘要

Organic interfacial layers offer an effective means to tune energy-level alignment and reduce interface-related transport limitations in metal/semiconductor (MS) devices. In this work, Schottky photodiodes with the Au/AA-AMB/n-Si/Au architecture were fabricated to examine the influence of a π-conjugated Schiff base (AA-AMB) interlayer on charge transport under dark and illuminated conditions. Thermionic-emission analysis, supported by Norde functions, showed that illumination lowers the apparent ideality factor while slightly increasing the effective barrier height and reducing the impact of series resistance. These improvements correlate with a significant decrease in the interface-state density (Nss), demonstrating that the AA-AMB layer enhances the electronic quality of the metal/organic/Si junction. The photocurrent scaled nearly proportionally with illumination intensity, and the absence of crossover in the small-bias regime confirmed efficient, field-assisted extraction. The intensity-dependent evolution of Voc, Isc, Pm, and FF followed typical MS-diode behavior. Power-law fitting yielded β = 1.084, indicative of dominant bimolecular recombination with minor trap participation. Photosensitivity, responsivity, detectivity, and linear dynamic range increased with illumination up to moderate flux before displaying the expected recombination-driven saturation. Overall, the results show that the AA-AMB interlayer effectively suppresses interfacial nonidealities and stabilizes the photoresponse, establishing the Au/AA-AMB/n-Si/Au diode as a promising candidate for photodetection and imaging applications. Notably, the observation of a finite zero-bias photocurrent indicates that the interface-engineered junction supports photovoltaic-effect-driven photodetection without external bias.