<p>Photodetectors (PDs) are vital components for potential optical communication and sensor systems. CuFe₂O₄, ZnO NPs, and CuFe₂O₄-ZnO NC was synthesized and investigated for optoelectronic PDs applications. The prepared material’s structural, morphological, compositional, and optical properties and I-V measurements are characterized. XRD analysis revealed the formation of spinel CuFe₂O₄ and hexagonal ZnO phases. The composite material retained the unique peak characteristics of both materials without structural distortion. SEM investigation showed a uniform amount of CuFe₂O₄ NPs on flake ZnO structures, and elemental mapping confirmed composite formation with uniform elemental distribution. Optical measurements revealed that the CuFe₂O₄-ZnO NC had improved visible light absorption and a lower band gap of 2.01&#xa0;eV. The electrical characteristics of photodiodes made from CuFe₂O₄, ZnO, and CuFe₂O₄-ZnO were investigated under both dark and illuminated conditions. The CuFe2O4-ZnO device enhanced diode performance by reducing the ideality factor, barrier height, and series resistance under illumination. The photodiode shows excellent photodetection performance with a maximal P_S of 402.03%, R of 0.037&#xa0;A/W, EQE of 83.74%, and D^* of 2.15 × 10¹³ Jones. The CuFe₂O₄-ZnO heterostructure demonstrates promising for effective and cost-effective optoelectronic PDs applications.</p>