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<p>The threshold current of GaN-based quantum well(QW) red lasers is modulated by modifying the In composition of InGaN waveguide layers and adjusting the thickness and structure of waveguide layers. Theoretical analysis based on LASTIP calculations reveals that the In composition for achieving the best threshold current increases initially with increasing laser wavelength, but when the wavelength reaches up to a value, it turns to decrease. Additionally, for the 636&#xa0;nm GaN-based red laser, the threshold current decreases with increasing waveguide layer thickness. Furthermore, the threshold current for lasers with a stepped waveguide structure of the same total thickness is lower than that for a single-layer waveguide. This work provides a new approach for structural optimization of GaN-based QW red lasers.</p>

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Optimized design of the waveguide layers for GaN-based QW red lasers

  • 期刊论文

  • 发表日期：

    2026年7月15日

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  • Zhongqiang Ge,
  • Mei Zhou,
  • Yachen Wang,
  • Jiankai Sun,
  • Degang Zhao,
  • Xingxian Wu,
  • Xin Zhou

摘要

The threshold current of GaN-based quantum well(QW) red lasers is modulated by modifying the In composition of InGaN waveguide layers and adjusting the thickness and structure of waveguide layers. Theoretical analysis based on LASTIP calculations reveals that the In composition for achieving the best threshold current increases initially with increasing laser wavelength, but when the wavelength reaches up to a value, it turns to decrease. Additionally, for the 636 nm GaN-based red laser, the threshold current decreases with increasing waveguide layer thickness. Furthermore, the threshold current for lasers with a stepped waveguide structure of the same total thickness is lower than that for a single-layer waveguide. This work provides a new approach for structural optimization of GaN-based QW red lasers.