Band-gap engineering and optical enhancement in Cu2MgSnS4 based quaternary chalcogenides
摘要
The structural, electronic, optical, and transport properties of Cu2MgSnS4−xSex (x = 0–4) quaternary chalcogenides were systematically investigated using first-principles density functional theory. Calculations were performed within the full-potential linearized augmented plan wave framework as implemented in WIEN2k. Structural optimization was carried out using the GGA-PBE functional, while electronic properties were evaluated using the Tran–Blaha modified Becke–Johnson potential combined with a Hubbard U correction applied to Cu-3d states. The calculations demonstrate a systematic lattice expansion and a continuous narrowing of the band gap from 1.477 eV for x = 0 to 0.991 eV for x = 4 as the Se concentration increases. Optical calculations indicate strong absorption in the visible spectral region, while transport properties computed using BoltzTraP2 demonstrate favourable Seebeck coefficients. These findings suggest that Cu2MgSnS4−xSex compounds possess tunable electronic and transport characteristics suitable for electronic and energy-related device applications.