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<p>Engineering stable p-type conduction in molybdenum disulfide (MoS<sub>2</sub>) remains a key challenge for all-2D homojunction optoelectronics. Here, we demonstrate a scalable urea-assisted nitrogen doping strategy enabling controlled p-type behavior and vertically stacked n–p homojunction solar cells. In an ITO/n-MoS<sub>2</sub>/p-MoS<sub>2</sub>/Pt architecture fabricated by spray coating, pristine MoS<sub>2</sub> serves as the electron transport layer, while N-doped MoS<sub>2</sub> (10–50%) acts as the hole transport layer. Nitrogen incorporation induces bandgap narrowing (1.0 to 0.58&#xa0;eV) and partial 2&#xa0;H-to-1T phase modulation, leading to enhanced optical absorption and electrical conductivity. Device optimization reveals an optimal doping level of 20%, yielding the highest photovoltaic performance under 40–100 mW·cm<sup>–2</sup> illumination. The improved efficiency is attributed to a balanced acceptor density, enhanced hole mobility, and reduced recombination. These results establish nitrogen doping as an effective route to engineer MoS<sub>2</sub> homojunctions for scalable 2D photovoltaic applications.</p>

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Engineering p-n MoS2 homojunctions via controlled nitrogen doping for photovoltaic applications

  • 期刊论文

  • 发表日期：

    2026年5月14日

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  • Youssef Doubi,
  • Ahmed Kotbi,
  • Bouchra Asbani,
  • Abdelkrim Batan,
  • Nitul Rajput,
  • Bouchaib Hartiti,
  • Mustapha Jouiad

摘要

Engineering stable p-type conduction in molybdenum disulfide (MoS2) remains a key challenge for all-2D homojunction optoelectronics. Here, we demonstrate a scalable urea-assisted nitrogen doping strategy enabling controlled p-type behavior and vertically stacked n–p homojunction solar cells. In an ITO/n-MoS2/p-MoS2/Pt architecture fabricated by spray coating, pristine MoS2 serves as the electron transport layer, while N-doped MoS2 (10–50%) acts as the hole transport layer. Nitrogen incorporation induces bandgap narrowing (1.0 to 0.58 eV) and partial 2 H-to-1T phase modulation, leading to enhanced optical absorption and electrical conductivity. Device optimization reveals an optimal doping level of 20%, yielding the highest photovoltaic performance under 40–100 mW·cm–2 illumination. The improved efficiency is attributed to a balanced acceptor density, enhanced hole mobility, and reduced recombination. These results establish nitrogen doping as an effective route to engineer MoS2 homojunctions for scalable 2D photovoltaic applications.