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<p>Plasmonic photonics enables subwavelength optical confinement for dense on-chip communication and modulation. CMOS-compatible plasmonic materials are essential for translating this capability into manufacturable photonic devices. Direct materials-to-device comparisons between refractory TiN and tunable ITO within one validated framework has been limited. This study evaluates TiN and ITO as complementary plasmonic media for waveguiding and active modulation. Thin films were deposited by reactive DC and RF magnetron sputtering, incorporated into metal–insulator–metal waveguides and an ITO/Al<sub>2</sub>O<sub>3</sub>/Si slot modulator, and characterized by spectroscopic ellipsometry, UV–Vis–NIR spectroscopy, AFM, XRD, and cutback transmission measurements. Finite-difference time-domain simulations were performed with permittivity values extracted from ellipsometry fits. TiN waveguides yielded 1.00 ± 0.05 dB/μm loss at 780&#xa0;nm, whereas ITO waveguides yielded 0.20 ± 0.01 dB/μm at 1550&#xa0;nm, and these result establishes distinct operating windows for the two materials. The ITO modulator achieved a 60% change in transmission at 5&#xa0;V over a 200&#xa0;μm active length, confirming efficient electro-optic control in a hybrid platform. TiN retained reflectance within ±3% after annealing from 25 to 900&#xa0;°C for 1&#xa0;h, which identifies it as a robust plasmonic medium. Future innovation targets high-speed modulation measurements and geometry-scaled device optimization under fully integrated driving conditions.</p>

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Plasmonic waveguides and modulators using TiN and ITO: a pathway to CMOS-compatible photonics

  • 期刊论文

  • 发表日期：

    2026年5月9日

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  • Prasanna Moorthy Venugopal,
  • Kamali Samudram Manickam,
  • Ratchagaraja Dhairiyasamy,
  • Malathy Vanniappan

摘要

Plasmonic photonics enables subwavelength optical confinement for dense on-chip communication and modulation. CMOS-compatible plasmonic materials are essential for translating this capability into manufacturable photonic devices. Direct materials-to-device comparisons between refractory TiN and tunable ITO within one validated framework has been limited. This study evaluates TiN and ITO as complementary plasmonic media for waveguiding and active modulation. Thin films were deposited by reactive DC and RF magnetron sputtering, incorporated into metal–insulator–metal waveguides and an ITO/Al2O3/Si slot modulator, and characterized by spectroscopic ellipsometry, UV–Vis–NIR spectroscopy, AFM, XRD, and cutback transmission measurements. Finite-difference time-domain simulations were performed with permittivity values extracted from ellipsometry fits. TiN waveguides yielded 1.00 ± 0.05 dB/μm loss at 780 nm, whereas ITO waveguides yielded 0.20 ± 0.01 dB/μm at 1550 nm, and these result establishes distinct operating windows for the two materials. The ITO modulator achieved a 60% change in transmission at 5 V over a 200 μm active length, confirming efficient electro-optic control in a hybrid platform. TiN retained reflectance within ±3% after annealing from 25 to 900 °C for 1 h, which identifies it as a robust plasmonic medium. Future innovation targets high-speed modulation measurements and geometry-scaled device optimization under fully integrated driving conditions.