Advances in high dielectric constant cerium oxide and its doped variants for the surface passivation of 4H-silicon carbide and silicon semiconductors
摘要
4H-silicon carbide (SiC)-based metal–oxide–semiconductor (MOS) capacitors have become the top choice for high-power and high-temperature applications, surpassing traditional silicon (Si)-based MOS capacitors due to their superior performance and reliability. However, the challenge of scaling down devices and the limitations of the low dielectric constant (k) of silicon dioxide (SiO2) has made it unsuitable as a passivation layer for both Si and 4H-SiC. Consequently, high k materials, such as cerium oxide (CeO2), have emerged as promising alternatives. This review provides a comprehensive analysis of CeO2-based high k passivation layers for Si and 4H-SiC substrates, highlighting key challenges in their implementation and strategies to enhance passivation characteristics. To the best of our knowledge, this is the first in-depth review dedicated to CeO2-based high k materials for these substrates, offering valuable insights for future device engineering.