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<p>We report a systematic study, including synthesis and multi-aspect characterization, of mercury-doped zinc oxide (Zn₁₋ₓHgₓO) thin films prepared by spray pyrolysis for planar waveguiding applications. Structural analysis by XRD reveals an enhancement in preferential orientation of the (002) plane with Hg concentration, accompanied by an expansion in the lattice parameter and crystal matrix stress along the c-axis. Raman microscopy confirms the formation of wurtzite ZnO, which is indicated by the dominant c-axis orientation vibrational modes. UV-Vis measurements show a slight increase in transmittance and in the optical band gap energy by about 0.02eV, owing to Hg-induced lattice distortion and reduced orbital overlap. Urbach energy analysis shows reduced energetic disorder, and photoluminescence spectra reveal defect-mediated transitions modulated by the introduction of Hg. Hall effect measurements show a reduced carrier concentration from 1.462 × 10<sup>13</sup> to 2.203 × 10<sup>12</sup> cm⁻<sup>3</sup> and an approximately 1.5-fold increase in mobility, indicating suppressed phonon-electron coupling. AFM confirms reduced surface roughness and grain size, with subsequent morphologies well suited for low-loss light coupling. M-lines spectroscopy detects bimodal TE/TM waveguiding behavior with refractive indices roughly 1.97-1.98 and tunable birefringence. The behavior of optogeometric parameters was also confirmed by spectroscopic ellipsometry, including increased refractive indices, reduced root-mean-square roughness, and an almost unvaried thickness. These findings qualify Zn₁₋ₓHgₓO as a promising material for integrated photonic devices, offering a synergistic blend of optical transparency, dielectric properties, and waveguide efficiency.</p>

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Tailored optoelectronic and structural properties of sprayed Hg-doped ZnO thin films for waveguiding applications

  • 期刊论文

  • 发表日期：

    2026年5月6日

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  • Yassine Bouachiba,
  • Abdelouadoud Mammeri,
  • Larbi Ben Hora Meriem,
  • Seyf El Islam Abdelmalek,
  • Halim Merabti,
  • Redha Aouati,
  • Saliha Bouaziz,
  • Halima Djaaboube,
  • Abdelmalik Zemieche,
  • Saad Amara,
  • Lyes Benharrat,
  • Badis Rahal,
  • Adel Taabouche,
  • Abderrahmane Bouabellou

摘要

We report a systematic study, including synthesis and multi-aspect characterization, of mercury-doped zinc oxide (Zn₁₋ₓHgₓO) thin films prepared by spray pyrolysis for planar waveguiding applications. Structural analysis by XRD reveals an enhancement in preferential orientation of the (002) plane with Hg concentration, accompanied by an expansion in the lattice parameter and crystal matrix stress along the c-axis. Raman microscopy confirms the formation of wurtzite ZnO, which is indicated by the dominant c-axis orientation vibrational modes. UV-Vis measurements show a slight increase in transmittance and in the optical band gap energy by about 0.02eV, owing to Hg-induced lattice distortion and reduced orbital overlap. Urbach energy analysis shows reduced energetic disorder, and photoluminescence spectra reveal defect-mediated transitions modulated by the introduction of Hg. Hall effect measurements show a reduced carrier concentration from 1.462 × 1013 to 2.203 × 1012 cm⁻3 and an approximately 1.5-fold increase in mobility, indicating suppressed phonon-electron coupling. AFM confirms reduced surface roughness and grain size, with subsequent morphologies well suited for low-loss light coupling. M-lines spectroscopy detects bimodal TE/TM waveguiding behavior with refractive indices roughly 1.97-1.98 and tunable birefringence. The behavior of optogeometric parameters was also confirmed by spectroscopic ellipsometry, including increased refractive indices, reduced root-mean-square roughness, and an almost unvaried thickness. These findings qualify Zn₁₋ₓHgₓO as a promising material for integrated photonic devices, offering a synergistic blend of optical transparency, dielectric properties, and waveguide efficiency.